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LH28F400SUT-NC60

4M (512K ? 8, 256K ? 16) Flash Memory

DESCRIPTION TheLH28F400SU-NCisahighperformance4M(4,194,304)blockerasablenon-volatilerandomaccessmemoryorganizedaseither256K×16or512K×8.TheLH28F400SU-NCincludesthirty-two16K(16,384)blocks.AchipmemorymapisshowninFigure5. Theimplementationofanewarchitectu

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司(SMA)

LH28F400SUT-NC80

4M (512K ? 8, 256K ? 16) Flash Memory

DESCRIPTION TheLH28F400SU-NCisahighperformance4M(4,194,304)blockerasablenon-volatilerandomaccessmemoryorganizedaseither256K×16or512K×8.TheLH28F400SU-NCincludesthirty-two16K(16,384)blocks.AchipmemorymapisshowninFigure5. Theimplementationofanewarchitectu

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司(SMA)

LH28F640SP

64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory

64Mbit(4Mbit×16/8Mbit×8)PageModeFlashMEMORY Theproduct,whichisPageModeFlashmemory,isahighdensity,lowcost,nonvolatileread/writestoragesolutionforawiderangeofapplications.TheproductcanoperateatVCC=2.7V-3.6VandVPEN=2.7V-3.6V Theproductsupportshighperformance

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司(SMA)

LH28F640SPHT-PTL12

64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory

64Mbit(4Mbit×16/8Mbit×8)PageModeFlashMEMORY Theproduct,whichisPageModeFlashmemory,isahighdensity,lowcost,nonvolatileread/writestoragesolutionforawiderangeofapplications.TheproductcanoperateatVCC=2.7V-3.6VandVPEN=2.7V-3.6V Theproductsupportshighperformance

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司(SMA)

LH28F800

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION TheLH28F800SG-L/SGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800SG-L/SGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司(SMA)

LH28F800BG

8 M-bit (512 kB x 16) SmartVoltage Flash Memory

DESCRIPTION TheLH28F800SG-LflashmemorywithSmartVoltagetechnologyisahigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800SG-LcanoperateatVCC=2.7VandVPP=2.7V.Itslowvoltageoperationcapabilityrealizeslongerbattery

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司(SMA)

LH28F800BGBBL12

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司(SMA)

LH28F800BGBBL85

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司(SMA)

LH28F800BGBTL12

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司(SMA)

LH28F800BGBTL85

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司(SMA)

詳細(xì)參數(shù)

  • 型號(hào):

    LH2

  • 功能描述:

    Buffer/Voltage Follower

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更多LH2供應(yīng)商 更新時(shí)間2025-4-8 14:20:00