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LH28F400SUHN

4M Flash Memory

4MFlashMemory

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH28F400SUHN-NC80

4M Flash Memory

4MFlashMemory

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH28F400SUHT

4Mbit(512Kbit x 8,256 Kbit x 16) 5V Single Voltage Flash Memory

4Mbit(512Kbitx8,256Kbitx16)5VSingleVoltageFlashMemory

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH28F400SUHT-NC80

4Mbit(512Kbit x 8,256 Kbit x 16) 5V Single Voltage Flash Memory

4Mbit(512Kbitx8,256Kbitx16)5VSingleVoltageFlashMemory

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH28F400SU-LC

4M (512K ? 8, 256K ? 16) Flash Memory

INTRODUCTION Sharp’sLH28F400SU-LC4MFlashMemoryisarevolutionaryarchitecturewhichenablesthedesignoftrulymobile,highperformance,personalcomputingandcommunicationproducts.Withinnovativecapabilities,3.3Vlowpoweroperationandveryhighread/writeperformance,theLH28F400S

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH28F400SUN

4Mbit(512Kbit x 8,256Kbit x 16) 3.3V Flash Memory

INTRODUCTION Thedatasheetisintendedtogiveanoverviewofthechipfeature-setandoftheoperatingAC/DCspecifications

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH28F400SU-NC

4M (512K ? 8, 256K ? 16) Flash Memory

DESCRIPTION TheLH28F400SU-NCisahighperformance4M(4,194,304)blockerasablenon-volatilerandomaccessmemoryorganizedaseither256K×16or512K×8.TheLH28F400SU-NCincludesthirty-two16K(16,384)blocks.AchipmemorymapisshowninFigure5. Theimplementationofanewarchitectu

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH28F400SUN-LC12

4Mbit(512Kbit x 8,256Kbit x 16) 3.3V Flash Memory

INTRODUCTION Thedatasheetisintendedtogiveanoverviewofthechipfeature-setandoftheoperatingAC/DCspecifications

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH28F400SUN-NC60

4M (512K ? 8, 256K ? 16) Flash Memory

DESCRIPTION TheLH28F400SU-NCisahighperformance4M(4,194,304)blockerasablenon-volatilerandomaccessmemoryorganizedaseither256K×16or512K×8.TheLH28F400SU-NCincludesthirty-two16K(16,384)blocks.AchipmemorymapisshowninFigure5. Theimplementationofanewarchitectu

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH28F400SUN-NC80

4M (512K ? 8, 256K ? 16) Flash Memory

DESCRIPTION TheLH28F400SU-NCisahighperformance4M(4,194,304)blockerasablenon-volatilerandomaccessmemoryorganizedaseither256K×16or512K×8.TheLH28F400SU-NCincludesthirty-two16K(16,384)blocks.AchipmemorymapisshowninFigure5. Theimplementationofanewarchitectu

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

詳細(xì)參數(shù)

  • 型號:

    LH2

  • 功能描述:

    Buffer/Voltage Follower

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23+
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50000
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ADI
24+
20000
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23+
LFCSP-10
89630
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22+
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23+
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8000
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ADI
23+
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7000
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2015+
TSOP48
19889
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2020+
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35000
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SHARP
24+
12
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24+/25+
9
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更多LH2供應(yīng)商 更新時(shí)間2025-4-8 14:20:00