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BTS118D

SmartLowSidePowerSwitch

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BU118

iscSiliconNPNPowerTransistor

DESCRIPTION ·ExcellentSafeOperatingArea VCE:200V ICM:7A ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforgeneral-purposeswitchingandamplifier applications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BUL118

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesig

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BUL118D

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesig

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BUL118D

iscSiliconNPNPowerTransistor

DESCRIPTION ?Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) ?LowCollectorSaturationVoltage :VCE(sat)=0.5V(Max)@IC=0.5A ?VeryHighSwitchingSpeed APPLICATIONS ?Designedforuseinlightingapplicationsandlowcostswitchmodepowersupplies.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BULD118

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BULK118

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedevicesaremanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. TheyuseaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedevicesare

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BULT118

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTORS

Description Thedeviceismanufacturedusinghighvoltagemulti-epitaxialplanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesacellularemitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BULT118

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BULT118

Highvoltagefast-switchingNPNpowertransistor

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

晶體管資料

  • 型號(hào)：

    BC118

  • 別名：

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家：

  • 制作材料：

    Si-NPN

  • 性質(zhì)：

    通用型 （Uni）

  • 封裝形式：

    直插封裝

  • 極限工作電壓：

    45V

  • 最大電流允許值：

  • 最大工作頻率：

    >200MHZ

  • 引腳數(shù)：

    3

  • 可代換的型號(hào)：

    BC107,BC171,BC182,BC207,BC237,BC382,BC547,BC582,3DG110C,

  • 最大耗散功率：

    0.2W

  • 放大倍數(shù)：

    β=80

  • 圖片代號(hào)：

    C-62

  • vtest：

    45

  • htest：

    200000100

  • atest：

    0

  • wtest：

    0.2

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
MOT/ST/PH
24+
CAN3
21322
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
 詢價(jià)
BlueCreation
20+
模塊
1128
無線通信IC,大量現(xiàn)貨!
 詢價(jià)
24+
CAN
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價(jià)
BlueCreation
22+
NA
2743
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
SGS
2023+
CAN3
8700
原裝現(xiàn)貨
 詢價(jià)
N/A
2447
SMD
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
BLUECREATION
20+
射頻元件
2255
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
 詢價(jià)
Sierra Wireless
23+
TO-18
12800
原裝正品代理商最優(yōu)惠價(jià)格,現(xiàn)貨或訂貨
 詢價(jià)
NO
24+
16
詢價(jià)
MOT/PH/ST/SSI
23+
CAN3
5000
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道。可提供大量庫(kù)存,詳
 詢價(jià)
更多BC118供應(yīng)商 更新時(shí)間2025-4-4 14:02:00

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