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LMG2100R044中文資料德州儀器數(shù)據(jù)手冊PDF規(guī)格書

LMG2100R044
廠商型號

LMG2100R044

功能描述

LMG2100R044 100V, 35A GaN Half-Bridge Power Stage

文件大小

1.37641 Mbytes

頁面數(shù)量

28

生產(chǎn)廠商 Texas Instruments
企業(yè)簡稱

TI1德州儀器

中文名稱

德州儀器官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-22 23:00:00

LMG2100R044規(guī)格書詳情

1 Features

? Integrated 4.4mΩ half-bridge GaN FETs and driver

? 90V continuous, 100V pulsed voltage rating

? Package optimized for easy PCB layout

? High slew rate switching with low ringing

? 5V external bias power supply

? Supports 3.3V and 5V input logic levels

? Gate driver capable of up to 10MHz switching

? Excellent propagation delay (33ns typical) and

matching (2ns typical)

? Internal bootstrap supply voltage clamping to

prevent GaN FET Overdrive

? Supply rail undervoltage for lockout protection

? Low power consumption

? Exposed top QFN package for top-side cooling

? Large GND pad for bottom-side cooling

2 Applications

? Buck, boost, buck-boost converters

? LLC converters

? Solar inverters

? Telecom and server power

? Motor drives

? Power tools

? Class-D audio amplifiers

3 Description

The LMG2100R044 device is a 90V continuous, 100V

pulsed, 35A half-bridge power stage, with integrated

gate-driver and enhancement-mode Gallium Nitride

(GaN) FETs. The device consists of two 100V GaN

FETs driven by one high-frequency 90V GaN FET

driver in a half-bridge configuration.

GaN FETs provide significant advantages for power

conversion as they have zero reverse recovery

and very small input capacitance CISS and output

capacitance COSS. All the devices are mounted

on a completely bond-wire free package platform

with minimized package parasitic elements. The

LMG2100R044 device is available in a 5.5mm ×

4.5mm × 0.89mm lead-free package and can be

easily mounted on PCBs.

The TTL logic compatible inputs can support 3.3V

and 5V logic levels regardless of the VCC voltage.

The proprietary bootstrap voltage clamping technique

ensures the gate voltages of the enhancement mode

GaN FETs are within a safe operating range.

The device extends advantages of discrete GaN

FETs by offering a more user-friendly interface. It

is an ideal solution for applications requiring highfrequency,

high-efficiency operation in a small form

factor.

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
TI(德州儀器)
23+
QFN32EP(8x8)
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費送樣,原廠技術(shù)支持!!!
詢價
TI(德州儀器)
23+
NA/
8735
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
詢價
TI(德州儀器)
23+
QFN32EP(8x8)
6000
誠信服務(wù),絕對原裝原盤
詢價
Texas Instruments
23+
SMD
245
微芯專營原廠正品現(xiàn)貨全系列
詢價
TI/德州儀器
24+
32-VQFN
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費!
詢價
TI
24+
17-PowerVQFN
16926
專注TI原裝正品代理分銷,認準水星電子
詢價
TI
22+
32-VQFN
5000
全新原裝,力挺實單
詢價
TI/德州儀器
23+
32-VQFN
4261
原裝正品代理渠道價格優(yōu)勢
詢價
TI/德州儀器
24+
VQFN-32
860000
明嘉萊只做原裝正品現(xiàn)貨
詢價
Texas Instruments
23+/24+
17-VQFN
8600
只供原裝進口公司現(xiàn)貨+可訂貨
詢價