LMG2650中文資料德州儀器數據手冊PDF規(guī)格書

1 Features

? 650V GaN power-FET half bridge

? 95mΩ low-side and high-side GaN FETs

? Integrated gate drivers with <100ns low

propagation delays

? Programmable turn-on slew rate control

? Current-sense emulation with high-bandwidth and

high accuracy

? Low-side referenced (INH) and high-side

referenced (GDH) high-side gate drive pins

? Low-side (INL) / high-side (INH) gate-drive

interlock

? High-side (INH) gate-drive signal level shifter

? Smart-switched bootstrap diode function

? High-side start up : <8μs

? Low-side / high-side cycle-by-cycle overcurrent

protection

? Overtemperature protection

? AUX idle quiescent current: 250μA

? AUX standby quiescent current: 50μA

? BST idle quiescent current: 85μA

? 8x6 mm QFN package with dual thermal pads

2 Applications

? <400W LLC converter

? <300W AHB / ACF converter

? <600W 3-Φ motor driver inverter

? <140W CrM totem pole PFC

3 Description

The LMG2650 is a 650V 95mΩ GaN power-FET

half bridge. The LMG2650 simplifies design, reduces

component count, and reduces board space by

integrating half-bridge power FETs, gate drivers,

bootstrap diode, and high-side gate-drive level shifter

in a 6mm by 8mm QFN package.

Programmable turn-on slew rates provide EMI and

ringing control. The low-side current-sense emulation

reduces power dissipation compared to the traditional

current-sense resistor and allows the low-side thermal

pad to be connected to the cooling PCB power

ground.

The high-side GaN power FET can be controlled with

either the low-side referenced gate-drive pin (INH)

or the high-side referenced gate-drive pin (GDH).

The high-side gate-drive signal level shifter reliably

transmits the INH pin signal to the high-side gate

driver in challenging power switching environments.

The smart-switched GaN bootstrap FET has no diode

forward-voltage drop, avoids overcharging the highside

supply, and has zero reverse-recovery charge.

The LMG2650 supports converter light-load efficiency

requirements and burst-mode operation with low

quiescent currents and fast start-up times. Protection

features include FET turn-on interlock, under-voltage

lockout (UVLO), cycle-by-cycle current limit, and overtemperature

shut down. Ultra low slew rate setting

supports motor drive applications.