LMG3422R050RQZR集成電路（IC）的全半橋驅(qū)動(dòng)器規(guī)格書(shū)PDF中文資料

LMG3422R050RQZR屬于集成電路（IC）的全半橋驅(qū)動(dòng)器。由德州儀器制造生產(chǎn)的LMG3422R050RQZR全半橋驅(qū)動(dòng)器器件屬于電橋驅(qū)動(dòng)器電源管理集成電路 (PMIC) 系列，包含兩個(gè)或多個(gè)功率晶體管，以及在外部器件控制下將其用作開(kāi)關(guān)所需的電路。這些晶體管通常在內(nèi)部配置為成對(duì)串聯(lián)連接（稱(chēng)為半橋），因而任意指定晶體管對(duì)之間的結(jié)點(diǎn)都可以連接至兩個(gè)電源軌中的任一個(gè)。這類(lèi)器件常用于將控制器件（如微控制器）提供的低電平信號(hào)轉(zhuǎn)換為操作執(zhí)行器（如步進(jìn)電機(jī)或無(wú)刷電機(jī)）所需的較大功率信號(hào)。

1 Features

? Qualified for JEDEC JEP180 for hard-switching

topologies

? 600V GaN-on-Si FET with integrated gate driver

– Integrated high precision gate bias voltage

– 200V/ns FET hold-off

– 3.6MHz switching frequency

– 20V/ns to 150V/ns slew rate for optimization of

switching performance and EMI mitigation

– Operates from 7.5V to 18V supply

? Robust protection

– Cycle-by-cycle overcurrent and latched shortcircuit

protection with < 100ns response

– Withstands 720V surge while hard-switching

– Self-protection from internal overtemperature

and UVLO monitoring

? Advanced power management

– Digital temperature PWM output

– LMG3426R050 includes zero-voltage detection

(ZVD) feature that facilitates soft-switching

converters

2 Applications

? Switch-mode power converters

? Merchant network and server PSU

? Merchant telecom rectifiers

? Solar inverters and industrial motor drives

? Uninterruptible power supplies

3 Description

The LMG342xR050 GaN FET with integrated driver

and protection is targeted at switch-mode power

converters and enables designers to achieve new

levels of power density and efficiency.

The LMG342xR050 integrates a silicon driver that

enables switching speed up to 150V/ns. TI’s

integrated precision gate bias results in higher

switching SOA compared to discrete silicon gate

drivers. This integration, combined with TI's lowinductance

package, delivers clean switching and

minimal ringing in hard-switching power supply

topologies. Adjustable gate drive strength allows

control of the slew rate from 20V/ns to 150V/ns,

which can be used to actively control EMI and

optimize switching performance. The LMG3426R050

includes the zero-voltage detection (ZVD) feature

which provides a pulse output from the ZVD pin when

zero-voltage switching is realized.

Advanced power management features include

digital temperature reporting and fault detection.

The temperature of the GaN FET is reported

through a variable duty cycle PWM output, which

simplifies managing device loading. Faults reported

include overcurrent, short-circuit, overtemperature,

VDD UVLO, and high-impedance RDRV pin.