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LMG3426R050RQZT中文資料德州儀器數(shù)據(jù)手冊(cè)PDF規(guī)格書

LMG3426R050RQZT
廠商型號(hào)

LMG3426R050RQZT

功能描述

LMG342xR050 600V 50mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

絲印標(biāo)識(shí)

LMG3426R050

封裝外殼

VQFN

文件大小

2.8057 Mbytes

頁(yè)面數(shù)量

54 頁(yè)

生產(chǎn)廠商 Texas Instruments
企業(yè)簡(jiǎn)稱

TI1德州儀器

中文名稱

德州儀器官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-28 19:49:00

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LMG3426R050RQZT規(guī)格書詳情

1 Features

? Qualified for JEDEC JEP180 for hard-switching

topologies

? 600V GaN-on-Si FET with integrated gate driver

– Integrated high precision gate bias voltage

– 200V/ns FET hold-off

– 3.6MHz switching frequency

– 20V/ns to 150V/ns slew rate for optimization of

switching performance and EMI mitigation

– Operates from 7.5V to 18V supply

? Robust protection

– Cycle-by-cycle overcurrent and latched shortcircuit

protection with < 100ns response

– Withstands 720V surge while hard-switching

– Self-protection from internal overtemperature

and UVLO monitoring

? Advanced power management

– Digital temperature PWM output

– LMG3426R050 includes zero-voltage detection

(ZVD) feature that facilitates soft-switching

converters

2 Applications

? Switch-mode power converters

? Merchant network and server PSU

? Merchant telecom rectifiers

? Solar inverters and industrial motor drives

? Uninterruptible power supplies

3 Description

The LMG342xR050 GaN FET with integrated driver

and protection is targeted at switch-mode power

converters and enables designers to achieve new

levels of power density and efficiency.

The LMG342xR050 integrates a silicon driver that

enables switching speed up to 150V/ns. TI’s

integrated precision gate bias results in higher

switching SOA compared to discrete silicon gate

drivers. This integration, combined with TI's lowinductance

package, delivers clean switching and

minimal ringing in hard-switching power supply

topologies. Adjustable gate drive strength allows

control of the slew rate from 20V/ns to 150V/ns,

which can be used to actively control EMI and

optimize switching performance. The LMG3426R050

includes the zero-voltage detection (ZVD) feature

which provides a pulse output from the ZVD pin when

zero-voltage switching is realized.

Advanced power management features include

digital temperature reporting and fault detection.

The temperature of the GaN FET is reported

through a variable duty cycle PWM output, which

simplifies managing device loading. Faults reported

include overcurrent, short-circuit, overtemperature,

VDD UVLO, and high-impedance RDRV pin.

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TI(德州儀器)
2022+
8000
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10000
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13000
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2021+
QFM-9(8x6)
499
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TI(德州儀器)
2021+
8000
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TexasI
23+
NA
6954
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TI
24+
SMD
15600
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24+
kaifaban
633
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TI(德州儀器)
23+
NA
20094
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NS
2015+
SOP/DIP
19889
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