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LPD200P70中文資料FILTRONIC數(shù)據(jù)手冊PDF規(guī)格書

LPD200P70
廠商型號

LPD200P70

功能描述

PACKAGED HIGH DYNAMIC RANGE PHEMT

文件大小

61.02 Kbytes

頁面數(shù)量

3

生產廠商 Filtronic Compound Semiconductors
企業(yè)簡稱

FILTRONIC

中文名稱

Filtronic Compound Semiconductors官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二

更新時間

2024-10-25 22:59:00

LPD200P70規(guī)格書詳情

DESCRIPTION AND APPLICATIONS

The LPD200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LPD200’s active areas are passivated with Si3N4, and the P70 ceramic package is ideal for low-cost, high-performance applications that require a surface-mount package.

Typical applications include high dynamic range receiver preamplifiers for commercial applications including Cellular/PCS systems and other types of commercial wireless systems.

FEATURES

? 20 dBm Output Power at 1-dB Compression at 18 GHz

? 9.5 dB Power Gain at 18 GHz

? 16 dB Small Signal Gain at 2 GHz

? 0.8 dB Noise Figure at 2 GHz

產品屬性

  • 型號:

    LPD200P70

  • 制造商:

    FILTRONIC

  • 制造商全稱:

    FILTRONIC

  • 功能描述:

    PACKAGED HIGH DYNAMIC RANGE PHEMT

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