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MSF20N50

N-ChannelEnhancementModePowerMOSFET

BWTECH

Bruckewell Technology LTD

MSW20N50

500VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

MTV20N50E

TMOSPOWERFET20AMPERES500VOLTSRDS(on)=0.240OHM

TMOSE?FETPowerFieldEffectTransistorD3PAKforSurfaceMount N?ChannelEnhancement?ModeSiliconGate TheD3PAKpackagehasthecapabilityofhousingthelargestchipsizeofanystandard,plastic,surfacemountpowersemiconductor.Thisallowsittobeusedinapplicationsthatrequiresurfa

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTV20N50E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTV20N50E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.24Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTW20N50E

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTW20N50E

TMOSPOWERFET20AMPERES500VOLTSRDS(on)=0.24OHM

TMOSE?FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N?ChannelEnhancement?ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMO

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTW20N50E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.24Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTY20N50E

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCE20N50

SuperJunctionMOSFET

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

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50000
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龍騰
2022
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80000
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LS
22+23+
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19997
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NS
2021++
NA
10000
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22+
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30000
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LS
22+
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28000
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LS
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1850
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24+
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更多LSD20N50供應(yīng)商 更新時(shí)間2025-1-23 23:00:00