MTW20N50E中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書
MTW20N50E規(guī)格書詳情
TMOS E?FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole
N?Channel Enhancement?Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Robust High Voltage Termination
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
? Isolated Mounting Hole Reduces Mounting Hardware
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
MOTOROLA/摩托羅拉 |
23+ |
TO3 |
15887 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種 |
詢價(jià) | ||
MOTOROLA |
15+ |
TO-247 |
11560 |
全新原裝,現(xiàn)貨庫存,長期供應(yīng) |
詢價(jià) | ||
ON/安森美 |
23+ |
TO247 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
MOT |
06+ |
TO-247 |
2500 |
原裝庫存 |
詢價(jià) | ||
MOTOLA |
23+ |
2800 |
正品原裝貨價(jià)格低 |
詢價(jià) | |||
24+ |
3900 |
詢價(jià) | |||||
ON |
23+24 |
TO-3P |
9860 |
原廠原包裝。終端BOM表可配單。可開13%增值稅 |
詢價(jià) | ||
ON |
TO247 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
ON |
02+ |
TO-3P |
102 |
旗艦店 |
詢價(jià) | ||
ON/安森美 |
23+ |
TO-247 |
10000 |
公司只做原裝正品 |
詢價(jià) |