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MJ11012

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON

High-CurrentComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. ?HighDCCurrentGain—hFE=1000(Min)@IC–20Adc ?MonolithicConstructionwithBuilt–inBaseEmitterShuntResistor ?JunctionTemperatureto+200°C

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJ11012

30AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON60.120VOLTS200WATTS

High-CurrentComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. ?HighDCCurrentGain-hFE=1000(Min)@IC?20Adc ?MonolithicConstructionwithBuilt?inBaseEmitterShuntResistor ?JunctionTemperatureto+200C

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJ11012

POWERTRANSISTORS(30A,60-120V,200W)

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. ?HighGainDarlingtonPerformance ?HighDCCurrentGainhFE=1000(Min)@IC=20A ?MonolithicConstructionwithBuilt?inBaseEmitterShun

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

MJ11012

NPNSILICONDARLINGTONTRANSISTOR(SWITCHINGREGULATORSPWMINVERTERSSOLENOIDANDRELAYDRIVERS)

SWITCHINGREGULATORSPWMINVERTERS SOLENOIDANDRELAYDRIVERS

WINGSWing Shing Computer Components

永盛電子永盛電子(香港)有限公司

MJ11012

High-CurrentComplementarySiliconTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJ11012

High-CurrentComplementarySiliconTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJ11012

PowerTransistors

PowerTransistors TO-3Case(Continued)

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

MJ11012

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION ?Collector-EmitterBreakdownVoltage- :V(BR)CEO=60V(Min.) ?HighDCCurrentGain- :hFE=1000(Min.)@IC=20A ?LowCollectorSaturationVoltage- :VCE(sat)=3.0V(Max.)@IC=20A ?ComplementtoTypeMJ11011 APPLICATIONS ?Designedforuseasoutputdevicesincomple

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MJ11012

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ..designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. FEATURES: *HighGainDarlingtonPerformance *HighDCCurrentGainhFE=1000(Min)@lc=20A *MonolithicConstructionwithBuilt-inBase-EmitterS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MJ11012G

High-CurrentComplementarySiliconTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NKC11012A

StandardRecoveryDiodes

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

NKD11012A

StandardRecoveryDiodes

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

NKE11012A

StandardRecoveryDiodes

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

NKH11012

Thyristor/DiodePowerModules

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

NKH11012A

Thyristor/Diode

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

NKJ11012A

StandardRecoveryDiodes

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

NKT11012

Thyristor/DiodePowerModules

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

NKT11012A

Thyristor/Diode

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

PBIH-11012F

15-150WATTSDC/DCSINGLEOUTPUT

POWERBOX

Powerbox manufactures

PBIH-11012F

15-150WATTSDC/DCSINGLEOUTPUT

POWERBOX

Powerbox manufactures

詳細(xì)參數(shù)

  • 型號(hào):

    LT11012CS

  • 制造商:

    Linear Technology

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更多LT11012CS供應(yīng)商 更新時(shí)間2025-1-4 16:00:00