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M28F

2A SURFACE MOUNT SCHOTTKY BRIDGE

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

M28F008

8 MBIT (1 MBIT x 8) FLASH MEMORY

PRODUCTOVERVIEW TheM28F008isahigh-performance8Mbit(8,388,608bit)memoryorganizedas1Mbyte(1,048,576bytes)of8bitseach.Sixteen64Kbyte(65,536byte)blocksareincludedontheM28F008.AmemorymapisshowninFigure4ofthisspecification.Ablockeraseoperationerasesoneof

IntelIntel Corporation

英特爾

M28F010

1024K (128K x 8) CMOS FLASH MEMORY

1024K(128Kx8)CMOSFLASHMEMORY Intel’sM28F010isa1024-Kbitbyte-wide,in-systemre-writable,CMOSnonvolatileflashmemory.Itisorganizedas131,072bytesof8bitsandisavailableina32-pinhermeticCERDIPpackage.TheM28F010isalsoavailablein32-contactleadlesschipcarrier,J-

IntelIntel Corporation

英特爾

M28F101

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M28F101-100K1

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M28F101-100K3

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M28F101-100K6

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M28F101-100N1

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M28F101-100N3

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M28F101-100N6

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M28F101-100P1

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M28F101-100P3

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M28F101-100P6

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M28F101-100XK1

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M28F101-100XK3

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M28F101-100XK6

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M28F101-100XN1

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M28F101-100XN3

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M28F101-100XN6

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M28F101-100XP1

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號：

    M28F

  • 制造商：

    INTEL

  • 制造商全稱：

    Intel Corporation

  • 功能描述：

    8 MBIT(1 MBIT x 8) FLASH MEMORY

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
ST
2015+
SOP/DIP
19889
一級代理原裝現(xiàn)貨,特價(jià)熱賣!
 詢價(jià)
ST
23+
SOP
3700
絕對全新原裝!現(xiàn)貨!特價(jià)!請放心訂購!
 詢價(jià)
STM
2016+
TSSOP40
9000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價(jià)
ST
23+
PLCC32
9526
詢價(jià)
ST
24+
SOP
6980
原裝現(xiàn)貨,可開13%稅票
 詢價(jià)
ST
16+
PLCC
15
原裝現(xiàn)貨假一罰十
 詢價(jià)
ST
24+
PLCC32
10000
自己現(xiàn)貨
 詢價(jià)
ST
13
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
 詢價(jià)
ST
24+
PLCC-44
4650
詢價(jià)
ST
17+
DIP
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
更多M28F供應(yīng)商 更新時(shí)間2025-1-9 15:36:00

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