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M28F101-200XN6中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
M28F101-200XN6規(guī)格書(shū)詳情
DESCRIPTION
The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the
chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F101 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.
Features
? 5V±10 SUPPLY VOLTAGE
? 12V PROGRAMMING VOLTAGE
? FAST ACCESS TIME: 70ns
? BYTE PROGRAMING TIME: 10μs typical
? ELECTRICAL CHIP ERASE in 1s RANGE
? LOW POWER CONSUMPTION
– Stand-by Current: 100μA max
? 10,000 ERASE/PROGRAM CYCLES
? INTEGRATED ERASE/PROGRAM-STOP TIMER
? OTP COMPATIBLE PACKAGES and PINOUTS
? ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 07h
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
PLCC |
16900 |
正規(guī)渠道,只有原裝! |
詢價(jià) | ||
ST |
23+ |
PLCC-32 |
9526 |
詢價(jià) | |||
ST/意法 |
23+ |
TSOP-32 |
13000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
MIT |
24+ |
TSSOP |
2300 |
十年品牌!原裝現(xiàn)貨!!! |
詢價(jià) | ||
ST |
PLCC |
36900 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價(jià) | |||
ST |
22+ |
PLCC |
16900 |
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持! |
詢價(jià) | ||
ST |
24+ |
PLCC |
24 |
詢價(jià) | |||
STM |
12+ |
NA |
100 |
終端備貨原裝現(xiàn)貨-軍工器件供應(yīng)商 |
詢價(jià) | ||
ST |
22+ |
PLCC44 |
66900 |
原廠原裝現(xiàn)貨 |
詢價(jià) | ||
ST |
24+ |
PLCC |
200000 |
原裝進(jìn)口正口,支持樣品 |
詢價(jià) |
