首頁>M28F201-120N3TR>規(guī)格書詳情
M28F201-120N3TR中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
M28F201-120N3TR規(guī)格書詳情
DESCRIPTION
The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor interface. The M28F201 FLASH Memory product is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.
■ 5V ± 10 SUPPLY VOLTAGE
■ 12V PROGRAMMING VOLTAGE
■ FAST ACCESS TIME: 70ns
■ BYTE PROGRAMMING TIME: 10μs typical
■ ELECTRICAL CHIP ERASE in 1s RANGE
■ LOW POWER CONSUMPTION
– Active Current: 15mAtypical
– Stand-by Current: 10μA typical
■ 10,000 PROGRAM/ERASE CYCLES
■ INTEGRATED ERASE/PROGRAM-STOP TIMER
■ OTP COMPATIBLE PACKAGES and PINOUTS
■ ELECTRONIC SIGNATURE
– ManufacturerCode: 20h
– Device Code: F4h
產(chǎn)品屬性
- 型號：
M28F201-120N3TR
- 制造商：
STMICROELECTRONICS
- 制造商全稱：
STMicroelectronics
- 功能描述：
2 Mb 256K x 8, Chip Erase FLASH MEMORY
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
PLCC32 |
16800 |
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
ST |
23+ |
PLCC |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ST |
23+ |
PLCC32 |
9526 |
詢價 | |||
ST/意法 |
23+ |
DIP-32 |
13000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
STM |
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 | |||
ST/意法 |
23+ |
NA |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
ST/意法 |
23+ |
PLCC |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
原裝 |
22+23+ |
PLCC-28 |
17402 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 | ||
ST |
TSOP-32 |
93480 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
ST |
06+ |
原廠原裝 |
4966 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價 |
