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M28F256-10B1TR中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
M28F256-10B1TR規(guī)格書詳情
DESCRIPTION
The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F512 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 90ns makes the device suitable for use in high speed microprocessor systems.
■ FAST ACCESS TIME: 90ns
■ LOW POWER CONSUMPTION
– Standby Current: 100μA Max
■ 10,000 ERASE/PROGRAM CYCLES
■ 12V PROGRAMMING VOLTAGE
■ TYPICAL BYTE PROGRAMING TIME 10μs (PRESTO F ALGORITHM)
■ ELECTRICAL CHIP ERASE in 1s RANGE
■ INTEGRATED ERASE/PROGRAM-STOP TIMER
■ EXTENDED TEMPERATURE RANGES
產(chǎn)品屬性
- 型號：
M28F256-10B1TR
- 制造商：
STMICROELECTRONICS
- 制造商全稱：
STMicroelectronics
- 功能描述：
512 Kbit(64Kb x8 Bulk Erase)Flasxh Memory
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
NA/ |
3278 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
詢價 | ||
ST |
2020+ |
DIP-32 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
ST |
1033+ |
PLCC32 |
14504 |
只做原廠原裝,認(rèn)準(zhǔn)寶芯創(chuàng)配單專家 |
詢價 | ||
ST |
PLCC |
93480 |
集團(tuán)化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
ST |
DIP-32 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 | |||
ST |
2015+ |
DIP |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
STM |
9944 |
9 |
公司優(yōu)勢庫存 熱賣中! |
詢價 | |||
ST |
24+ |
9850 |
公司原裝現(xiàn)貨/隨時可以發(fā)貨 |
詢價 | |||
AMD |
24+ |
DIP-24 |
5000 |
全新原裝正品,現(xiàn)貨銷售 |
詢價 | ||
ST |
24+ |
DIP |
100 |
詢價 |
