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M28F256-10C3TR中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

M28F256-10C3TR
廠商型號(hào)

M28F256-10C3TR

功能描述

512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory

文件大小

523.409 Kbytes

頁(yè)面數(shù)量

20 頁(yè)

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-26 9:30:00

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M28F256-10C3TR價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨

M28F256-10C3TR規(guī)格書詳情

DESCRIPTION

The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F512 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 90ns makes the device suitable for use in high speed microprocessor systems.

■ FAST ACCESS TIME: 90ns

■ LOW POWER CONSUMPTION

– Standby Current: 100μA Max

■ 10,000 ERASE/PROGRAM CYCLES

■ 12V PROGRAMMING VOLTAGE

■ TYPICAL BYTE PROGRAMING TIME 10μs (PRESTO F ALGORITHM)

■ ELECTRICAL CHIP ERASE in 1s RANGE

■ INTEGRATED ERASE/PROGRAM-STOP TIMER

■ EXTENDED TEMPERATURE RANGES

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
ST
24+
9850
公司原裝現(xiàn)貨/隨時(shí)可以發(fā)貨
詢價(jià)
ST
2020+
DIP-32
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
SGSTHOMSON
05+
原廠原裝
4272
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
STM
23+24
DIP-
9680
原盒原標(biāo).進(jìn)口原裝.支持實(shí)單 .價(jià)格優(yōu)勢(shì)
詢價(jià)
ST/意法
2022
DIP32
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價(jià)
AMD
22+23+
DIP-24
8000
新到現(xiàn)貨,只做原裝進(jìn)口
詢價(jià)
STM
9944
9
公司優(yōu)勢(shì)庫(kù)存 熱賣中!
詢價(jià)
AMD
24+
DIP-24
5000
全新原裝正品,現(xiàn)貨銷售
詢價(jià)
INTERSIL
23+
原裝正品現(xiàn)貨
10000
DIP-28
詢價(jià)
ST
2015+
DIP
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
詢價(jià)