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M28F256-90XB1TR中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書
M28F256-90XB1TR規(guī)格書詳情
DESCRIPTION
The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F512 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 90ns makes the device suitable for use in high speed microprocessor systems.
■ FAST ACCESS TIME: 90ns
■ LOW POWER CONSUMPTION
– Standby Current: 100μA Max
■ 10,000 ERASE/PROGRAM CYCLES
■ 12V PROGRAMMING VOLTAGE
■ TYPICAL BYTE PROGRAMING TIME 10μs (PRESTO F ALGORITHM)
■ ELECTRICAL CHIP ERASE in 1s RANGE
■ INTEGRATED ERASE/PROGRAM-STOP TIMER
■ EXTENDED TEMPERATURE RANGES
產(chǎn)品屬性
- 型號(hào)：
M28F256-90XB1TR
- 制造商：
STMICROELECTRONICS
- 制造商全稱：
STMicroelectronics
- 功能描述：
512 Kbit(64Kb x8 Bulk Erase)Flasxh Memory
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
TSOP40 |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
ST |
DIP |
93480 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價(jià) | |||
ST |
DIP |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
ST |
23+ |
TSOP |
16900 |
正規(guī)渠道,只有原裝! |
詢價(jià) | ||
STM |
9535 |
35 |
公司優(yōu)勢(shì)庫(kù)存 熱賣中! |
詢價(jià) | |||
ST |
新 |
20 |
全新原裝 貨期兩周 |
詢價(jià) | |||
ST |
22+ |
TSOP |
16900 |
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持! |
詢價(jià) | ||
ST |
24+ |
DIP |
78 |
詢價(jià) | |||
ST |
16+ |
BGA |
4000 |
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)! |
詢價(jià) | ||
N/A |
2021+ |
SMD |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) |
