M29DW640D90N6中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

Family Overview

Densities from 32Mb to 64Mb

0.15μm process technology

Wide application area covered

technology shrink on going

higher densities

improved performances

Increased reliability

Main Features

M29DW323

32Mb (4Mbx8 / 2Mbx16), Boot Block

Access Time

70, 90ns

Supply Voltage

Vcc = 2.7V to 3.6V for Program, Erase and Read

Vpp = 12V for fast Program (optional)

Programming Time

10μs per Byte/Word typical

Double Word / Quadruple Byte Program

Low Power Consumption

Standby and Automatic Standby

Dual Operations:

Read in one bank or group of banks while Program or Erase in the other