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M29W400B

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29W400B-100M1R

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29W400B-100M1TR

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29W400B-100M5R

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29W400B-100M5TR

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29W400B-100M6R

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29W400B-100M6TR

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29W400B-100N1R

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29W400B-100N1TR

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29W400B-100N5R

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

詳細參數(shù)

  • 型號：

    M29W400B

  • 功能描述：

    閃存 512Kx8 or 256Kx16

  • RoHS：

    否

  • 制造商：

    ON Semiconductor

  • 數(shù)據(jù)總線寬度：

    1 bit

  • 存儲類型：

    Flash

  • 存儲容量：

    2 MB

  • 結構：

    256 K x 8

  • 接口類型：

    SPI

  • 電源電壓-最大：

    3.6 V

  • 電源電壓-最?。?/span>

    2.3 V

  • 最大工作電流：

    15 mA

  • 工作溫度：

    - 40 C to + 85 C

  • 安裝風格：

    SMD/SMT

  • 封裝：

    Reel

供應商型號品牌批號封裝庫存備注價格
ST
TSSOP48
93480
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價
ST
2015+
DIP/SMD
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
TOS
23+
DIP
9526
詢價
ST
04+
TSOP48
2568
全新原裝進口自己庫存優(yōu)勢
 詢價
ST
23+
TSOP-48
5000
原裝正品,假一罰十
 詢價
ST
24+
BGA-M48P
2560
絕對原裝!現(xiàn)貨熱賣!
 詢價
ST
24+
QFP
2
現(xiàn)貨供應
 詢價
ST
2016+
TSOP48
1000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
ST
2020+
TSOP-48
32
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
ST
17+
TSSOP
6200
100%原裝正品現(xiàn)貨
 詢價
更多M29W400B供應商 更新時間2025-1-20 17:08:00

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