M36DR432AD集成電路（IC）的存儲器規(guī)格書PDF中文資料

M36DR432AD屬于集成電路（IC）的存儲器。由意法半導(dǎo)體集團(tuán)制造生產(chǎn)的M36DR432AD存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

SUMMARY DESCRIPTION

The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM.

The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied with all the bits erased (set to ‘1’).

FEATURES SUMMARY

■ Multiple Memory Product

– 1 bank of 32 Mbit (2Mb x16) Flash Memory

– 1 bank of 4 Mbit (256Kb x16) SRAM

■ SUPPLY VOLTAGE

– VDDF = VDDS =1.65V to 2.2V

– VPPF = 12V for Fast Program (optional)

■ ACCESS TIMES: 85ns, 100ns, 120ns

■ LOW POWER CONSUMPTION

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code, M36DR432AD: 00A0h

– Bottom Device Code, M36DR432BD: 00A1h

FLASH MEMORY

■ MEMORY BLOCKS

– Dual Bank Memory Array: 4 Mbit, 28 Mbit

– Parameter Blocks (Top or Bottom location)

■ PROGRAMMING TIME

– 10μs by Word typical

– Double Word Program Option

■ ASYNCHRONOUS PAGE MODE READ

– Page Width: 4 Words

– Page Access: 35ns

– Random Access: 85ns, 100ns, 120ns

■ DUAL BANK OPERATIONS

– Read within one Bank while Program or

Erase within the other

– No delay between Read and Write operations

■ BLOCK LOCKING

– All blocks locked at Power up

– Any combination of blocks can be locked

– WPF for Block Lock-Down

■ COMMON FLASH INTERFACE (CFI)

– 64 bit Unique Device Identifier

– 64 bit User Programmable OTP Cells

■ ERASE SUSPEND and RESUME MODES

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

SRAM

■ 4 Mbit (256Kb x16)

■ LOW VDDS DATA RETENTION: 1.0V

■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS