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M36P0R9070E0

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

Summarydescription TheM36P0R9070E0combinestwomemorydevicesinoneMulti-ChipPackage: ●512-MbitMultipleBankFlashmemory(theM58PR512J). ●128MbitPSRAM(theM69KB128AB). Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespecttoeachother.It

NUMONYX

numonyx

M36P0R9070E0

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M36P0R9070E0

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M36P0R9070E0ZAC

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

Summarydescription TheM36P0R9070E0combinestwomemorydevicesinoneMulti-ChipPackage: ●512-MbitMultipleBankFlashmemory(theM58PR512J). ●128MbitPSRAM(theM69KB128AB). Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespecttoeachother.It

NUMONYX

numonyx

M36P0R9070E0ZACE

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

Summarydescription TheM36P0R9070E0combinestwomemorydevicesinoneMulti-ChipPackage: ●512-MbitMultipleBankFlashmemory(theM58PR512J). ●128MbitPSRAM(theM69KB128AB). Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespecttoeachother.It

NUMONYX

numonyx

M36P0R9070E0ZACF

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

Summarydescription TheM36P0R9070E0combinestwomemorydevicesinoneMulti-ChipPackage: ●512-MbitMultipleBankFlashmemory(theM58PR512J). ●128MbitPSRAM(theM69KB128AB). Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespecttoeachother.It

NUMONYX

numonyx

M36P0R9070E0_06

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M36P0R9070E0ZAC

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M36P0R9070E0ZAC

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M36P0R9070E0ZACE

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

詳細參數(shù)

  • 型號：

    M36P0R9070E0

  • 制造商：

    STMICROELECTRONICS

  • 制造商全稱：

    STMicroelectronics

  • 功能描述：

    512 Mbit(x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit(Burst) PSRAM, 1.8V Supply, Multi-Chip Package

供應商型號品牌批號封裝庫存備注價格
ST
2016+
BGA
6523
只做進口原裝現(xiàn)貨!假一賠十!
 詢價
ST
24+
BGA
1681
原裝現(xiàn)貨假一罰十
 詢價
ST
07+
BGA
58
原裝現(xiàn)貨海量庫存歡迎咨詢
 詢價
ST
23+
BGA
8650
受權代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
ST
2020+
BGA
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
ST
24+
BGA
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
ST
23+
BGA
30000
原裝現(xiàn)貨,假一賠十.
 詢價
ST
2021+
BGA
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
ST
19+
BGA
5574
進口原裝現(xiàn)貨
 詢價
ST/意法
21+
BGA
5000
原裝現(xiàn)貨/假一賠十/支持第三方檢驗
 詢價
更多M36P0R9070E0供應商 更新時間2025-1-24 14:36:00

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