M36W416BG70ZA1T中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

SUMMARY DESCRIPTION

The M36W416TG is a low voltage Multiple Memory Product which combines two memory devices; a 16 Mbit boot block Flash memory and a 4 Mbit SRAM. Recommended operating conditions do not allow both the Flash memory and the SRAM memory to be active at the same time.

FEATURES SUMMARY

■ MULTIPLE MEMORY PRODUCT

– 16 Mbit (1Mb x 16) Boot Block Flash Memory

– 4 Mbit (256Kb x 16) SRAM

■ SUPPLY VOLTAGE

– VDDF = VDDS = 2.7V to 3.3V

– VDDQF = VDDS = 2.7V to 3.3V

– VPPF = 12V for Fast Program (optional)

■ ACCESS TIME: 70ns, 85ns

■ LOW POWER CONSUMPTION

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M36W416TG: 88CEh

– Bottom Device Code, M36W416BG: 88CFh

FLASH MEMORY

■ MEMORY BLOCKS

– Parameter Blocks (Top or Bottom location)

– Main Blocks

■ PROGRAMMING TIME

– 10μs typical

– Double Word Programming Option

■ BLOCK LOCKING

– All blocks locked at Power up

– Any combination of blocks can be locked

– WPF for Block Lock-Down

■ AUTOMATIC STAND-BY MODE

■ PROGRAM and ERASE SUSPEND

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ COMMON FLASH INTERFACE

– 64 bit Security Code

■ SECURITY

– 64 bit user programmable OTP cells

– 64 bit unique device identifier

– One parameter block permanently lockable

SRAM

■ 4 Mbit (256Kb x 16)

■ ACCESS TIME: 70ns

■ LOW VDDS DATA RETENTION: 1.5V

■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS