M36W432BG70ZA6T中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

SUMMARY DESCRIPTION

The M36W432TG is a low voltage Multiple Memory Product which combines two memory devices; a 32 Mbit boot block Flash memory and a 4 Mbit SRAM. Recommended operating conditions do not allow both the Flash and SRAM devices to be active at the same time.

FEATURES SUMMARY

■ MULTIPLE MEMORY PRODUCT

– 32 Mbit (2Mb x 16), Boot Block, Flash Memory

– 4 Mbit (256Kb x 16) SRAM Memory

■ SUPPLY VOLTAGE

– VDDF = 2.7V to 3.3V

– VDDS = VDDQF = 2.7V to 3.3V

– VPPF = 12V for Fast Program (optional)

■ ACCESS TIME: 70ns, 85ns

■ LOW POWER CONSUMPTION

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M36W432TG: 88BAh

– Bottom Device Code, M36W432BG: 88BBh

FLASH MEMORY

■ MEMORY BLOCKS

– Parameter Blocks (Top or Bottom Location)

– Main Blocks

■ PROGRAMMING TIME

– 10μs typical

– Double Word Programming Option

– Quadruple Word Programming Option

■ BLOCK LOCKING

– All blocks locked at Power up

– Any combination of blocks can be locked

– WPF for Block Lock-Down

■ AUTOMATIC STANDBY MODE

■ PROGRAM and ERASE SUSPEND

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ COMMON FLASH INTERFACE

■ SECURITY

– 128 bit user programmable OTP cells

– 64 bit unique device identifier

SRAM

■ 4 Mbit (256Kb x 16)

■ ACCESS TIME: 70ns

■ LOW VDDS DATA RETENTION: 1.5V

■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS