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M470T3354CZ0-CLCC中文資料三星數(shù)據(jù)手冊PDF規(guī)格書
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M470T3354CZ0-CLCC規(guī)格書詳情
Features
? Performance range
? JEDEC standard 1.8V ± 0.1V Power Supply
? VDDQ = 1.8V ± 0.1V
? 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin
? 4 Banks
? Posted CAS
? Programmable CAS Latency: 3, 4, 5
? Programmable Additive Latency: 0, 1 , 2 , 3 and 4
? Write Latency(WL) = Read Latency(RL) -1
? Burst Length: 4 , 8(Interleave/nibble sequential)
? Programmable Sequential / Interleave Burst Mode
? Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
? Off-Chip Driver(OCD) Impedance Adjustment
? On Die Termination with selectable values(50/75/150 ohms or disable)
? PASR(Partial Array Self Refresh)
? Average Refresh Period 7.8us at lower than a TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C
- support High Temperature Self-Refresh rate enable feature
? Package: 60ball FBGA - 64Mx8 , 84ball FBGA - 32Mx16
? All of Lead-free products are compliant for RoHS
產(chǎn)品屬性
- 型號:
M470T3354CZ0-CLCC
- 制造商:
SAMSUNG
- 制造商全稱:
Samsung semiconductor
- 功能描述:
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
N/A |
90000 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
SAM |
23+ |
NA |
126 |
專做原裝正品,假一罰百! |
詢價 | ||
MICRON |
1844+ |
BGA |
6528 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
詢價 | ||
SAMSUNG |
22+23+ |
New |
32133 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
SAMSUNG/三星 |
SODIMM |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 | |||
SAMSUNG |
24+ |
SODIMM |
35200 |
一級代理/放心采購 |
詢價 | ||
SAMSUNG/三星 |
22+ |
23509 |
鄭重承諾只做原裝進(jìn)口貨 |
詢價 | |||
SAMSANG |
19+ |
SODIMM |
256800 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價 | ||
SAM |
24+ |
37 |
詢價 | ||||
SAMSUNG |
22+ |
252 |
原裝現(xiàn)貨,假一罰十 |
詢價 |