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M58BW016BBT

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M58BW016BBZA

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M58BW016BT

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M58BW016BTT

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M58BW016BTZA

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M58BW016DB

16Mbit(512Kbitx32,bootblock,burst)

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

MicronMicron Technology

鎂光美國鎂光科技有限公司

M58BW016DB

16Mbit(512Kbitx32,bootblock,burst)3VsupplyFlashmemories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

NUMONYX

numonyx

M58BW016DB

16Mbit(512Kbx32,bootblock,burst)3VsupplyFlashmemories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M58BW016DB

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M58BW016DBT

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M58BW016DBZA

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M58BW016DT

16Mbit(512Kbitx32,bootblock,burst)

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

MicronMicron Technology

鎂光美國鎂光科技有限公司

M58BW016DT

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M58BW016DT

16Mbit(512Kbx32,bootblock,burst)3VsupplyFlashmemories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M58BW016DT

16Mbit(512Kbitx32,bootblock,burst)3VsupplyFlashmemories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

NUMONYX

numonyx

M58BW016DTT

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M58BW016DTZA

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M58BW016FB

16Mbit(512Kbitx32,bootblock,burst)3VsupplyFlashmemories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

NUMONYX

numonyx

M58BW016FB

16Mbit(512Kbx32,bootblock,burst)3VsupplyFlashmemories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

M58BW016FB

16Mbit(512Kbitx32,bootblock,burst)

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

MicronMicron Technology

鎂光美國鎂光科技有限公司

詳細參數(shù)

  • 型號:

    M58BW016BBT

  • 制造商:

    STMICROELECTRONICS

  • 制造商全稱:

    STMicroelectronics

  • 功能描述:

    16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

供應商型號品牌批號封裝庫存備注價格
ST
2021+
BGA
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價
ST
BGA
93480
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價
ST
1844+
QFP
9852
只做原裝正品假一賠十為客戶做到零風險!!
詢價
ST
16+
QFP
2500
進口原裝現(xiàn)貨/價格優(yōu)勢!
詢價
MITSUBIS
23+
BGAQFP
8659
原裝公司現(xiàn)貨!原裝正品價格優(yōu)勢.
詢價
602
詢價
ST
QFP80
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
詢價
MITSUBIS
NA
5650
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
詢價
ST
24+
QFP
6500
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
BOSCH
24+
QFP-80
618
詢價
更多M58BW016BBT供應商 更新時間2024-11-17 15:00:00