M58BW016DT100T6T中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

SUMMARY DESCRIPTION

The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally a 12V VPP supply can be used to provide fast program and erase for a limited time and number of program/erase cycles.

The devices support Asynchronous (Latch Controlled and Page Read) and Synchronous Bus operations. The Synchronous Burst Read Interface allows a high data transfer rate controlled by the Burst Clock, K, signal. It is capable of bursting fixed or unlimited lengths of data. The burst type, latency and length are configurable and can be easily adapted to a large variety of system clock frequencies and microprocessors. All Writes are Asynchronous. On power-up the memory defaults to Read mode with an Asynchronous Bus.

The device has a boot block architecture with an array of 8 parameter block of 64Kb each and 31 main blocks of 512Kb each. The parameter blocks can be located at the top of the address space, M58BW016BT, M58BW016DT or at the bottom, M58BW016BB, M58BW016DB.

Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a Program or Erase operation can be detected and any error conditions identified in the Status Register. The command set required to control the memory is consistent with JEDEC standards.

PE4FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VDD = 2.7V to 3.6V for Program, Erase and Read

– VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers

– VPP = 12V for fast Program (optional)

■ HIGH PERFORMANCE

– Access Time: 80, 90 and 100ns

– 56MHz Effective Zero Wait-State Burst Read

– Synchronous Burst Reads

– Asynchronous Page Reads

■ HARDWARE BLOCK PROTECTION

– WP pin Lock Program and Erase

■ SOFTWARE BLOCK PROTECTION

– Tuning Protection to Lock Program and Erase with 64 bit User Programmable Pass word (M58BW016B version only)

■ OPTIMIZED for FDI DRIVERS

– Fast Program / Erase suspend latency time < 6μs

– Common Flash Interface

■ MEMORY BLOCKS

– 8 Parameters Blocks (Top or Bottom)

– 31 Main Blocks

■ LOW POWER CONSUMPTION

– 5μA Typical Deep Power Down

– 60μA Typical Standby

– Automatic Standby after Asynchronous Read

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code M58BW016xT: 8836h

– Bottom Device Code M58BW016xB: 8835h