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M58LW032A90ZA6T中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

M58LW032A90ZA6T
廠商型號(hào)

M58LW032A90ZA6T

功能描述

32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory

文件大小

856.36 Kbytes

頁(yè)面數(shù)量

61 頁(yè)

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體(ST)集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二原廠數(shù)據(jù)手冊(cè)到原廠下載

更新時(shí)間

2024-11-8 20:38:00

M58LW032A90ZA6T規(guī)格書詳情

SUMMARY DESCRIPTION

The M58LW032 is a 32 Mbit (2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. On power-up the memory defaults to Read mode with an asynchronous bus where it can be read in the same way as a non-burst Flash memory.

FEATURES SUMMARY

■ WIDE x16 DATA BUS for HIGH BANDWIDTH

■ SUPPLY VOLTAGE

– VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations

– VDDQ = 1.8V to VDD for I/O Buffers

■ SYNCHRONOUS/ASYNCHRONOUS READ

– Synchronous Burst read

– Asynchronous Random Read

– Asynchronous Address Latch Controlled Read

– Page Read

■ ACCESS TIME

– Synchronous Burst Read up to 56MHz

– Asynchronous Page Mode Read 90/25ns and 110/25ns

– Random Read 90ns, 110ns.

■ PROGRAMMING TIME

– 16 Word Write Buffer

– 18μs Word effective programming time

■ 64 UNIFORM 32 KWord MEMORY BLOCKS

■ BLOCK PROTECTION/ UNPROTECTION

■ PROGRAM and ERASE SUSPEND

■ 128 bit PROTECTION REGISTER

■ COMMON FLASH INTERFACE

■ 100, 000 PROGRAM/ERASE CYCLES per BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Device Code M58LW032A: 8816h

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