M58MR064C120ZC6T中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The M58MR064 is a 64 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally. The device supports synchronous burst read and asynchronous read from all the blocks of the memory array; at power-up the device is configured for page mode read. In synchronous burst mode, a new data is output at each clock cycle for frequencies up to 54MHz.

■ SUPPLY VOLTAGE

– VDD = VDDQ = 1.65V to 2.0V for Program, Erase and Read

– VPP = 12V for fast Program (optional)

■ MULTIPLEXED ADDRESS/DATA

■ SYNCHRONOUS / ASYNCHRONOUS READ

– Burst mode Read: 54MHz

– Page mode Read (4 Words Page)

– Random Access: 100ns

■ PROGRAMMING TIME

– 10μs by Word typical

– Two or four words programming option

■ MEMORY BLOCKS

– Dual Bank Memory Array: 16/48 Mbit

– Parameter Blocks (Top or Bottom location)

■ DUAL OPERATIONS

– Read within one Bank while Program or Erase within the other

– No delay between Read and Write operations

■ PROTECTION/SECURITY

– All Blocks protected at Power-up

– Any combination of Blocks can be protected

– 64 bit unique device identifier

– 64 bit user programmable OTP cells

– One parameter block permanently lockable

■ COMMON FLASH INTERFACE (CFI)

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M58MR064C: 88DCh

– Bottom Device Code, M58MR064D: 88DDh