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首頁(yè) >M58WR064ET>規(guī)格書(shū)列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
M58WR064ET	文件：1.10087 Mbytes Page：82 Pages	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58WR064ET10ZB6T	文件：1.10087 Mbytes Page：82 Pages	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58WR064ET70ZB6T	文件：1.10087 Mbytes Page：82 Pages	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58WR064ET80ZB6T	文件：1.10087 Mbytes Page：82 Pages	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58WR064ETZB	文件：1.10087 Mbytes Page：82 Pages	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58WR064ET70ZB6T	文件：100 bytes Page：1 Pages	包裝：托盤(pán) 封裝/外殼：56-VFBGA 類別：集成電路（IC）存儲(chǔ)器描述：IC FLASH 64MBIT PARALLEL 56VFBGA	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58WR064ETZB	文件：1.10087 Mbytes Page：82 Pages	64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58WR064E-ZBT	文件：1.10087 Mbytes Page：82 Pages	64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58WR064FT	文件：573.03 Kbytes Page：87 Pages	64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58WR064FTB	文件：573.03 Kbytes Page：87 Pages	64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58WR064F-ZB	文件：573.03 Kbytes Page：87 Pages	64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58WR064F-ZBE	文件：573.03 Kbytes Page：87 Pages	64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58WR064F-ZBF	文件：573.03 Kbytes Page：87 Pages	64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58WR064F-ZBT	文件：573.03 Kbytes Page：87 Pages	64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58WR064HB	文件：2.02336 Mbytes Page：111 Pages	64Mbit(4Mbx16,MultipleBank,Burst)1.8VsupplyFlashmemories	NUMONYX numonyx	NUMONYX
M58WR064HL	文件：2.08426 Mbytes Page：114 Pages	64Mbit(4Mbx16,MuxI/O,MultipleBank,Burst)1.8VsupplyFlashmemories	NUMONYX numonyx	NUMONYX
M58WR064HT	文件：2.02336 Mbytes Page：111 Pages	64Mbit(4Mbx16,MultipleBank,Burst)1.8VsupplyFlashmemories	NUMONYX numonyx	NUMONYX
M58WR064HU	文件：2.08426 Mbytes Page：114 Pages	64Mbit(4Mbx16,MuxI/O,MultipleBank,Burst)1.8VsupplyFlashmemories	NUMONYX numonyx	NUMONYX
M58WR064KL	文件：2.33454 Mbytes Page：123 Pages	16-,32-and64-Mbit(x16,MuxI/O,MultipleBank,Burst)1.8VsupplyFlashmemories	NUMONYX numonyx	NUMONYX
M58WR064KU	文件：2.33454 Mbytes Page：123 Pages	16-,32-and64-Mbit(x16,MuxI/O,MultipleBank,Burst)1.8VsupplyFlashmemories	NUMONYX numonyx	NUMONYX

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詳細(xì)參數(shù)

型號(hào)：
M58WR064ET
制造商：
STMICROELECTRONICS
制造商全稱：
STMicroelectronics
功能描述：
64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	M58WR064ET70ZB6	ST	24+	FBGA	200		詢價(jià)
深圳誠(chéng)思涵科技有限公司	M58WR064ET70ZB6T	STMicroelectronics	18+	ICFLASH64MBIT70NS56VFBGA	6800	公司原裝現(xiàn)貨	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	M58WR064ET70ZB6T	Micron	1844+	VFBGA56	6528	只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!	詢價(jià)
深圳市斌騰達(dá)科技有限公司	M58WR064ET70ZB6T	STMicroelectronics	21+	60-TFBGA	5280	進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng)	詢價(jià)
瀚佳科技(深圳)有限公司	M58WR064ET70ZB6T	STMicroelectronics	24+	56-VFBGA(7.7x9)	56200	一級(jí)代理/放心采購(gòu)	詢價(jià)
深圳市科雨電子有限公司	M58WR064ET70ZB6T	STM	20+	BGA-56	1001	就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!	詢價(jià)
深圳市明盛嘉電子科技有限公司	M58WR064ET70ZB6	MICRON/美光	21+	VFBGA56	5000	原裝現(xiàn)貨/假一賠十/支持第三方檢驗(yàn)	詢價(jià)
深圳市易訊博科技有限公司	M58WR064ET70ZB6T		22+	NA	3000	加我QQ或微信咨詢更多詳細(xì)信息,	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	M58WR064ET70ZB6	MICRON/美光	23+	VFBGA56	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市河鋒鑫科技有限公司	M58WR064ET70ZB6T	ST	22+	56VFBGA (7.7x9)	9000	原廠渠道,現(xiàn)貨配單	詢價(jià)

更多M58WR064ET供應(yīng)商更新時(shí)間2025-1-8 15:30:00

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