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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
M58WR064HL	文件：2.08426 Mbytes Page：114 Pages	64 Mbit (4Mb x16, Mux I/O, Multiple Bank, Burst) 1.8V supply Flash memories	NUMONYX numonyx	NUMONYX
M58WR064HL70ZB6E	文件：2.08426 Mbytes Page：114 Pages	64 Mbit (4Mb x16, Mux I/O, Multiple Bank, Burst) 1.8V supply Flash memories	NUMONYX numonyx	NUMONYX
M58WR064HL70ZB6U	文件：2.08426 Mbytes Page：114 Pages	64 Mbit (4Mb x16, Mux I/O, Multiple Bank, Burst) 1.8V supply Flash memories	NUMONYX numonyx	NUMONYX
M58WR064	文件：1.10087 Mbytes Page：82 Pages	64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58WR064B	文件：497.11 Kbytes Page：81 Pages	64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064isa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopti	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58WR064EB	文件：1.10087 Mbytes Page：82 Pages	64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58WR064EBZB	文件：1.10087 Mbytes Page：82 Pages	64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58WR064ET	文件：1.10087 Mbytes Page：82 Pages	64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58WR064ETZB	文件：1.10087 Mbytes Page：82 Pages	64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58WR064E-ZBT	文件：1.10087 Mbytes Page：82 Pages	64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58WR064FT	文件：573.03 Kbytes Page：87 Pages	64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58WR064FTB	文件：573.03 Kbytes Page：87 Pages	64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58WR064F-ZB	文件：573.03 Kbytes Page：87 Pages	64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58WR064F-ZBE	文件：573.03 Kbytes Page：87 Pages	64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58WR064F-ZBF	文件：573.03 Kbytes Page：87 Pages	64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58WR064F-ZBT	文件：573.03 Kbytes Page：87 Pages	64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M58WR064HB	文件：2.02336 Mbytes Page：111 Pages	64Mbit(4Mbx16,MultipleBank,Burst)1.8VsupplyFlashmemories	NUMONYX numonyx	NUMONYX
M58WR064HT	文件：2.02336 Mbytes Page：111 Pages	64Mbit(4Mbx16,MultipleBank,Burst)1.8VsupplyFlashmemories	NUMONYX numonyx	NUMONYX
M58WR064HU	文件：2.08426 Mbytes Page：114 Pages	64Mbit(4Mbx16,MuxI/O,MultipleBank,Burst)1.8VsupplyFlashmemories	NUMONYX numonyx	NUMONYX
M58WR064KL	文件：2.33454 Mbytes Page：123 Pages	16-,32-and64-Mbit(x16,MuxI/O,MultipleBank,Burst)1.8VsupplyFlashmemories	NUMONYX numonyx	NUMONYX

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詳細(xì)參數(shù)

型號(hào)：
M58WR064HL
制造商：
NUMONYX
制造商全稱：
Numonyx B.V
功能描述：
64 Mbit(4Mb x16, Mux I/O, Multiple Bank, Burst) 1.8V supply Flash memories

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市明盛嘉電子科技有限公司	M58WR064HL70ZB6U	ST/意法	21+	BGA	5000	原裝現(xiàn)貨/假一賠十/支持第三方檢驗(yàn)	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	M58WR064HL70ZB6U	ST/意法	23+	BGA	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳廊盛科技有限公司	M58WR064HL70ZB6U	ST/意法	2022	BGA	80000	原裝現(xiàn)貨,OEM渠道,歡迎咨詢	詢價(jià)
深圳市匯萊威科技有限公司	M58WR064HL70ZB6U		ST	BGA	68900	原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	M58WR064HL7AZA6	ST/意法	23+	BGA	3000	一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、	詢價(jià)
深圳市美思瑞電子科技有限公司	M58WR064HL70ZB6U	ST	22+	BGA	12245	現(xiàn)貨,原廠原裝假一罰十!	詢價(jià)
易創(chuàng)佳業(yè)科技（深圳）有限公司	M58WR064HL70ZB6U	ST/意法	23+	BGA	9980	原裝正品，支持實(shí)單	詢價(jià)
深圳市弘為電子有限公司	M58WR064HL70ZB6U	Numonyx	22+	NA	30000	100%全新原裝假一賠十	詢價(jià)
深圳市億聯(lián)芯電子科技有限公司	M58WR064HL70ZB6U	ST/意法	2023+	BGA	6895	原廠全新正品旗艦店優(yōu)勢(shì)現(xiàn)貨	詢價(jià)
深圳市遠(yuǎn)進(jìn)半導(dǎo)體有限公司	M58WR064HL7AZA6	ST	22	BGA	25000	3月31原裝,微信報(bào)價(jià)	詢價(jià)

更多M58WR064HL供應(yīng)商更新時(shí)間2025-1-8 13:45:00

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