首頁 >M58WR064EB>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

M58WR064EB

64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58WR064EB10ZB6T

64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58WR064EB70ZB6T

64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58WR064EB80ZB6T

64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58WR064EBZB

64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58WR064EB70ZB6

包裝:托盤 封裝/外殼:56-VFBGA 類別:集成電路(IC) 存儲器 描述:IC FLASH 64MBIT PARALLEL 56VFBGA

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

M58WR064EB70ZB6T

包裝:托盤 封裝/外殼:56-VFBGA 類別:集成電路(IC) 存儲器 描述:IC FLASH 64MBIT PARALLEL 56VFBGA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58WR064EBZB

64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58WR064ET

64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58WR064ETZB

64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58WR064E-ZBT

64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58WR064FT

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58WR064FTB

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58WR064F-ZB

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58WR064F-ZBE

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58WR064F-ZBF

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58WR064F-ZBT

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58WR064HB

64Mbit(4Mbx16,MultipleBank,Burst)1.8VsupplyFlashmemories

NUMONYX

numonyx

M58WR064HL

64Mbit(4Mbx16,MuxI/O,MultipleBank,Burst)1.8VsupplyFlashmemories

NUMONYX

numonyx

M58WR064HT

64Mbit(4Mbx16,MultipleBank,Burst)1.8VsupplyFlashmemories

NUMONYX

numonyx

詳細(xì)參數(shù)

  • 型號:

    M58WR064EB

  • 制造商:

    STMICROELECTRONICS

  • 制造商全稱:

    STMicroelectronics

  • 功能描述:

    64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
ST
2016+
BGA
6528
只做原廠原裝現(xiàn)貨!終端客戶個別型號可以免費(fèi)送樣品!
詢價(jià)
ST
23+
BGA
5000
原裝正品,假一罰十
詢價(jià)
ST
24+
BGA-M56P
2560
絕對原裝!現(xiàn)貨熱賣!
詢價(jià)
ST
2339+
BGA
5632
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存!
詢價(jià)
STMicroelectronics
18+
ICFLASH64MBIT70NS56VFBGA
6800
公司原裝現(xiàn)貨
詢價(jià)
ST
18+
BGA
12500
全新原裝正品,本司專業(yè)配單,大單小單都配
詢價(jià)
STMicroelectronics
21+
60-TFBGA
5280
進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價(jià)格(誠信經(jīng)營
詢價(jià)
STMicroelectronics
24+
56-VFBGA(7.7x9)
56200
一級代理/放心采購
詢價(jià)
STM
20+
BGA-56
1001
就找我吧!--邀您體驗(yàn)愉快問購元件!
詢價(jià)
22+
NA
3000
加我QQ或微信咨詢更多詳細(xì)信息,
詢價(jià)
更多M58WR064EB供應(yīng)商 更新時間2025-1-8 16:06:00