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M59DR016-ZBT

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M59DR016

16Mbit1Mbx16,DualBank,Page1.8VSupplyFlashMemory

DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M59DR016C

16Mbit1Mbx16,DualBank,Page1.8VSupplyFlashMemory

DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M59DR016CZB

16Mbit1Mbx16,DualBank,Page1.8VSupplyFlashMemory

DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M59DR016D

16Mbit1Mbx16,DualBank,Page1.8VSupplyFlashMemory

DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M59DR016DZB

16Mbit1Mbx16,DualBank,Page1.8VSupplyFlashMemory

DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
BGA
3000
公司存貨
 詢價
ST
2020+
BGA
4500
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
ST
2138+
BGA
8960
專營BGA,QFP原裝現(xiàn)貨,假一賠十
 詢價
ST
23+
BGA
3000
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
 詢價
ST
BGA
93480
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價
st
1815+
fbga
6528
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
 詢價
ST/意法
23+
BGA
3000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價
ST
24+
BGA
7748
原裝現(xiàn)貨假一罰十
 詢價
ST/意法
24+
81
原裝現(xiàn)貨假一賠十
 詢價
ST/意法
22+
N/A
354000
詢價
更多M59DR016-ZBT供應(yīng)商 更新時間2025-2-4 10:20:00

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