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M5M4V4265CJ中文資料三菱電機數(shù)據(jù)手冊PDF規(guī)格書

M5M4V4265CJ
廠商型號

M5M4V4265CJ

功能描述

EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM

文件大小

317.4 Kbytes

頁面數(shù)量

31

生產廠商 Mitsubishi Electric Semiconductor
企業(yè)簡稱

Mitsubishi三菱電機

中文名稱

三菱電機株式會社官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-3-13 18:28:00

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M5M4V4265CJ規(guī)格書詳情

DESCRIPTION

This is a family of 262144-word by 16-bit dynamic RAMs with EDO mode fuction, fabricated with the high performance CMOS process, and is ideal for the buffer memory systems of personal computer graphics and HDD where high speed, low power dissipation, and low costs are essential. The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. The lower supply (3.3V) operation, due to the optimization of transistor structure, provides low power dissipation while maintaining high speed operation. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. Self or extended refresh current is low enough for battery back-up application. This device has 2CAS and 1W terminals with a refresh cycle of 512 cycles every 8.2ms.

FEATURES

● Standard 40 pin SOJ, 44 pin TSOP (II)

● Single 3.3±0.3V supply

● Low stand-by power dissipation

CMOS Input level ---------------------------------- 1.8mW (Max)

CMOS Input level ---------------------------------- 360μW (Max) *

● Operating power dissipation

M5M4V4265CXX-5,-5S -------------------------------- 486mW (Max)

M5M4V4265CXX-6,-6S -------------------------------- 432mW (Max)

M5M4V4265CXX-7,-7S -------------------------------- 396mW (Max)

● Self refresh capability *

Self refresh current ------------------------------ 100μA (Max)

● Extended refresh capability

Extended refresh current -------------------------- 100μA (Max)

● EDO mode (512-column random access), Read-modify-write, RASonly refresh, CAS before RAS refresh, Hidden refresh capabilities.

● Early-write mode, OE and W to control output buffer impedance

● 512 refresh cycles every 8.2ms (A0~A8)

● 512 refresh cycles every 128ms (A0~A8) *

● Byte or word control for Read/Write operation (2CAS, 1W type)

* : Applicable to self refresh version (M5M4V4265CJ,TP-5S,-6S, -7S : option) only

APPLICATION

Microcomputer memory, Refresh memory for CRT, Frame buffer memory for CRT

產品屬性

  • 型號:

    M5M4V4265CJ

  • 制造商:

    MITSUBISHI

  • 制造商全稱:

    Mitsubishi Electric Semiconductor

  • 功能描述:

    EDO(HYPER PAGE) MODE 4194304-BIT(262144-WORD BY 16-BIT) DYNAMIC RAM

供應商 型號 品牌 批號 封裝 庫存 備注 價格
MIT
23+
QFP
3200
全新原裝、誠信經營、公司現(xiàn)貨銷售!
詢價
FUJI
17+
SOP40
9988
只做原裝進口,自己庫存
詢價
MIT
24+
SOJ40
9
原裝現(xiàn)貨假一賠十
詢價
MITSUBISHI
2020+
TSOP
4500
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
MITSUBISHI
97+
TSOP
1373
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
MITSUBISHI
24+
TSSOP
20000
全新原廠原裝,進口正品現(xiàn)貨,正規(guī)渠道可含稅?。?/div>
詢價
FUJI
99+
SOP40
3300
全新原裝進口自己庫存優(yōu)勢
詢價
MIT
20+
TSOP
2960
誠信交易大量庫存現(xiàn)貨
詢價
MIT
22+23+
TSOP
7480
絕對原裝正品全新進口深圳現(xiàn)貨
詢價
MIT
23+
TSOP40
8000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
詢價