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M5M5

MEDIUM CURRENT SILICON RECTIFIERS

[EDAL]

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

M5M5

SILICON GENERAL PURPOSE 5.0 AMP DIODES

[EDAL]

EDAL

Edal Industries, Inc.

M5M51008BFP

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

M5M51008BFP-10VL

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

M5M51008BFP-10VLL

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

M5M51008BFP-12VL

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

M5M51008BFP-12VLL

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

M5M51008BFP-15VL

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

M5M51008BFP-15VLL

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

M5M51008BFP-70VL

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

M5M51008BFP-70VLL

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

M5M51008BKR-10VL

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

M5M51008BKR-10VLL

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

M5M51008BKR-12VL

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

M5M51008BKR-12VLL

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

M5M51008BKR-15VL

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

M5M51008BKR-15VLL

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

M5M51008BKR-70VL

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

M5M51008BKR-70VLL

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

M5M51008BKV-10VL

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào):

    M5M5

  • 功能描述:

    MEDIUM CURRENT SILICON RECTIFIERS

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
EDAL
23+
NA
39960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
RENESAS
23+
NA
19854
專業(yè)電子元器件供應(yīng)鏈正邁科技特價(jià)代理QQ1304306553
詢價(jià)
MITSUBISHI
23+
TSOP-28
65600
詢價(jià)
MITSUBISHI/三菱
22+
TSSOP52
25000
只做原裝,絕對(duì)原裝,假一罰十!
詢價(jià)
MIT
SOP-28
68500
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
詢價(jià)
RENESAS
23+/24+
TSOP44
15000
原裝進(jìn)口、正品保障、合作持久
詢價(jià)
RENESAS/瑞薩
22+
SOP28
3800
只做原裝,價(jià)格優(yōu)惠,長(zhǎng)期供貨。
詢價(jià)
MIT
1535+
313
詢價(jià)
N/A
2023+
TSOP44
3000
全新原裝正品,優(yōu)勢(shì)價(jià)格
詢價(jià)
RENESAS
2019+/2020+
QFN
3000
原裝正品現(xiàn)貨庫(kù)存
詢價(jià)
更多M5M5供應(yīng)商 更新時(shí)間2024-12-27 9:39:00