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M5M51008CFP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M51008CKV

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M51008CP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M51008CRV

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M51008CVP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M51008DFP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M51008DFP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M51008DKR

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M51008DKV

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M51008DRV

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M51008DVP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數(shù)

  • 型號:

    M5M51008BP

  • 制造商:

    MITSUBISHI

  • 制造商全稱:

    Mitsubishi Electric Semiconductor

  • 功能描述:

    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

供應商型號品牌批號封裝庫存備注價格
MITSUBISHI
23+
NA
25060
只做進口原裝,終端工廠免費送樣
詢價
MIT
95+
DIP
3560
全新原裝進口自己庫存優(yōu)勢
詢價
24+
DIP32
3000
公司存貨
詢價
MIT
23+
DIP/32
7000
絕對全新原裝!100%保質量特價!請放心訂購!
詢價
MITSUBI
2020+
DIP-32
5
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
MITSUBISHI
16+
DIP
11191
原裝現(xiàn)貨假一罰十
詢價
MITSUBISHI
24+
DIP-32
4650
詢價
MIT
2339+
DIP
4652
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
詢價
MIT
17+
DIP
9988
只做原裝進口,自己庫存
詢價
RENESAS/MITSUBISH
1824+
DIP-32
2950
原裝現(xiàn)貨專業(yè)代理,可以代拷程序
詢價
更多M5M51008BP供應商 更新時間2025-1-3 9:01:00