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M5M5256DRV-70LL

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M5256DRV-70VLL

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M5256DRV-70VLL-I

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M5256DRV-70VLL-W

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M5256DRV-70VXL

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M5256DRV-70VXL-I

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M5256DRV-70XL

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

供應(yīng)商型號品牌批號封裝庫存備注價格
RENESAS
1802+
TSSOP
6528
只做原裝正品現(xiàn)貨,或訂貨假一賠十!
 詢價
RENESAS
2020+
TSSOP
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價
RENESAS/瑞薩
23+
TSSOP
30000
原裝現(xiàn)貨,假一賠十.
 詢價
RENESAS
23+
TSSOP
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
MIT
2023+
TSSOP
3750
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
 詢價
MIT
23+
468
全新原裝，歡迎來電咨詢
 詢價
RENESAS/瑞薩
23+
TSSOP
8000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價
MITSUBISHI
24+
TSSOP-28
4650
詢價
MITSUBISHI
23+
NA
25060
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
MISUMICHI
24+
TSSOP-28
106
詢價
更多M5M5256DRV-70LL-I供應(yīng)商 更新時間2025-1-21 17:54:00

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