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MA4E2508L-1112中文資料MA-COM數(shù)據(jù)手冊PDF規(guī)格書

MA4E2508L-1112
廠商型號

MA4E2508L-1112

功能描述

SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair

文件大小

103.45 Kbytes

頁面數(shù)量

4

生產(chǎn)廠商 M/A-COM Technology Solutions, Inc.
企業(yè)簡稱

MA-COM

中文名稱

M/A-COM Technology Solutions, Inc.官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-19 17:49:00

MA4E2508L-1112規(guī)格書詳情

Description

The MA4E2508 SURMOUNTTM Anti-Parallel Diode Series are Silicon Low, Medium, & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, low loss, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device.

Features

? Extremely Low Parasitic Capacitance & Inductance

? Surface Mountable in Microwave Circuits, No Wirebonds Required

? Rugged HMIC Construction with Polyimide Scratch Protection

? Reliable, Multilayer Metalization with a Diffusion Barrier, 100 Stabilization Bake (300°C, 16 hours)

產(chǎn)品屬性

  • 型號:

    MA4E2508L-1112

  • 制造商:

    M/A-COM Technology Solutions

  • 功能描述:

    RF SCHOTTKY DIODE

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NA
8600
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100500
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2308+
原裝正品
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MACOM
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