MAT03EH分立半導(dǎo)體產(chǎn)品的晶體管-雙極性晶體管（BJT）-陣列規(guī)格書PDF中文資料

MAT03EH屬于分立半導(dǎo)體產(chǎn)品的晶體管-雙極性晶體管（BJT）-陣列。由亞德諾半導(dǎo)體技術(shù)有限公司制造生產(chǎn)的MAT03EH晶體管 - 雙極性晶體管（BJT）- 陣列雙極晶體管陣列在同一封裝中包含兩個或更多的分立晶體管，這些晶體管可在電氣上完全隔離，也可在器件封裝內(nèi)部以某種形式互連。陣列中包含的器件具有相近或互補的特性，采用共同封裝可最大程度減小器件在工作過程中的溫差。

GENERAL DESCRIPTION

The MAT03 dual monolithic PNP transistor offers excellent parametric matching and high frequency performance. Low noise characteristics (1 nV/√Hz max @ 1 kHz), high bandwidth (190 MHz typical), and low offset voltage (100 μV max), makes the MAT03 an excellent choice for demanding preamplifier applications. Tight current gain matching (3 max mismatch) and high current gain (100 min), over a wide range of collector current, makes the MAT03 an excellent choice for current mirrors. A low value of bulk resistance (typically 0.3 ?) also makes the MAT03 an ideal component for applications requiring accurate logarithmic conformance.

Each transistor is individually tested to data sheet specifications. Device performance is guaranteed at 25°C and over the extended industrial and military temperature ranges. To insure the long term stability of the matching parameters, internal protection diodes across the base-emitter junction clamp any reverse base emitter junction potential. This prevents a base-emitter break down condition which can result in degradation of gain and matching performance due to excessive breakdown current.

FEATURES

Dual Matched PNP Transistor

Low Offset Voltage: 100 mV max

Low Noise: 1 nV/√Hz @ 1 kHz max

High Gain: 100 min

High Gain Bandwidth: 190 MHz typ

Tight Gain Matching: 3 max

Excellent Logarithmic Conformance: rBE = 0.3 Ω typ

Available in Die F