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MCH5812

MOSFET:N-ChannelSiliconMOSFETSBD:SchottkyBarrierDiodeGeneral-PurposeSwitchingDeviceApplications

MOSFET:N-ChannelSiliconMOSFETSBD:SchottkyBarrierDiode Features ?CompositetypewithaN-channelsilliconMOSFET(MCH3445)andaschottkybarrierdiode(SS10015M)containedinonepackagefacilitatinghigh-densitymounting. ?[MOSFET] ?LowON-resistance. ?Ultrahigh-speedsw

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

MK5812

LowEMIClockGenerator

ICST

Integrated Circuit Systems

MK5812

LOWEMICLOCKGENERATOR

Features ?Packagedin8-pinSOIC ?Providesaspreadspectrumoutputclock ?Supportsflatpanelcontrollers ?Acceptsaclockorcrystalinput(providessame frequencyditheredoutput) ?Inputfrequencyrangeof4to32MHz ?Outputfrequencyrangeof8to64MHz ?2Xfrequencymultiplic

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

MK5812

LOWEMICLOCKGENERATOR

Features ?Packagedin8-pinSOIC ?Pb(lead)freepackage,RoHScompliant ?Providesaspreadspectrumoutputclock ?Supportsprintersandflatpanelcontrollers ?Acceptsaclockorcrystalinput(providessame frequencyditheredoutput) ?Inputfrequencyrangeof4to32MHz ?Outputf

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

MK5812SLF

LOWEMICLOCKGENERATOR

Features ?Packagedin8-pinSOIC ?Providesaspreadspectrumoutputclock ?Supportsflatpanelcontrollers ?Acceptsaclockorcrystalinput(providessame frequencyditheredoutput) ?Inputfrequencyrangeof4to32MHz ?Outputfrequencyrangeof8to64MHz ?2Xfrequencymultiplic

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

MK5812SLFTR

LOWEMICLOCKGENERATOR

Features ?Packagedin8-pinSOIC ?Providesaspreadspectrumoutputclock ?Supportsflatpanelcontrollers ?Acceptsaclockorcrystalinput(providessame frequencyditheredoutput) ?Inputfrequencyrangeof4to32MHz ?Outputfrequencyrangeof8to64MHz ?2Xfrequencymultiplic

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

MRF5812

RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS

DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?AssociatedGain=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveSO-8package

ADPOW

Advanced Power Technology

MRF5812

NPNSILICONRFMICROWAVETRANSISTOR

DESCRIPTION: TheASIMRF5812isDesignedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. FEATURES: ?LowNoise–2.5dB@500MHz ?Ftau–5.0GHz@10V,75mA ?CostEffectiveSO-8package

ASI

Advanced Semiconductor

MRF5812

RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS

DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?AssociatedGain=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveSO-8package

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MRF5812G

RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS

DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?AssociatedGain=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveSO-8package

ADPOW

Advanced Power Technology

詳細(xì)參數(shù)

  • 型號(hào)：

    MAX5812PEUT-T

  • 功能描述：

    數(shù)模轉(zhuǎn)換器- DAC

  • RoHS：

    否

  • 制造商：

    Texas Instruments

  • 轉(zhuǎn)換器數(shù)量：

    1 DAC

  • 輸出端數(shù)量：

    1

  • 轉(zhuǎn)換速率：

    2 MSPs

  • 分辨率：

    16 bit

  • 接口類(lèi)型：

    QSPI, SPI, Serial(3-Wire, Microwire)

  • 穩(wěn)定時(shí)間：

    1 us

  • 最大工作溫度：

    + 85 C

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    SOIC-14

  • 封裝：

    Tube

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更多MAX5812PEUT-T供應(yīng)商 更新時(shí)間2025-1-20 15:14:00

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