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MBR360T3

Surface Mount Schottky Power Rectifier

SCHOTTKYBARRIERRECTIFIERS3.0AMPERES20,30,40VOLTS ThesedevicesemploytheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,hi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MBRAF360T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRAF360T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRS360T3

SCHOTTKYBARRIERRECTIFIERS

SCHOTTKYBARRIERRECTIFIERS3.0AMPERES20,30,40VOLTS ThesedevicesemploytheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,hi

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRS360T3G

SurfaceMountSchottkyPowerRectifier

ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRS360T3G

SurfaceMountSchottkyPowerRectifier

ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRS360T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRS360T3G

SCHOTTKYBARRIERRECTIFIERS3.0AMPERES,60VOLTS

SCHOTTKYBARRIERRECTIFIERS3.0AMPERES,60VOLTS ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,hi

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MURS360T3

SurfaceMountUltrafastPowerRectifiers

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MURS360T3

ULTRAFASTRECTIFIERS3.0AMPERES200-600VOLTS

SurfaceMountUltrafastPowerRectifiers ...employingstate–of–the–artepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforhighvoltage,highfrequencyrectification,orasfreewheelingandprotectiondiodes,insurfacemountapplicationswherecompact

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MURS360T3G

SurfaceMountUltrafastPowerRectifiers

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MURS360T3G

PowerRectifiers,Ultra-fastRecovery

Thisseriesemploysthestate?of?the?artepitaxialconstructionwith oxidepassivationandmetaloverlaycontact.Ideallysuitedforhigh voltage,highfrequencyrectification,orasfreewheelingand protectiondiodes,insurfacemountapplicationswherecompactsize andweightarecriticalt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MURS360T3G

SurfaceMountUltrafastPowerRectifiers

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NRTSAF360T3G

Trench-basedSchottkyRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NRVBAF360T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NRVBS360T3G

SurfaceMountSchottkyPowerRectifier

ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NRVBS360T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NRVBS360T3G

SurfaceMountSchottkyPowerRectifier

ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NRVBS360T3G

SCHOTTKYBARRIERRECTIFIERS3.0AMPERES,60VOLTS

SCHOTTKYBARRIERRECTIFIERS3.0AMPERES,60VOLTS ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,hi

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NRVTSAF360T3G

Trench-basedSchottkyRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

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ON
23+
DO-201
9500
正品原裝貨價(jià)格低qq:2987726803
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IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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ON/安森美
23+
DO201
50000
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ON/安森美
24+
DO201
300
原裝現(xiàn)貨假一賠十
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ON/安森美
2022
DO201
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
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HB
24+
3A
98000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!
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GK
DO-27DO-2
568923
提供BOM表配單只做原裝貨值得信賴
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VISHAYMAS
22+23+
DO-201
51950
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
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ON/安森美
21+
DO-201
30000
百域芯優(yōu)勢(shì) 實(shí)單必成 可開13點(diǎn)增值稅
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VISHAY/威世
DO-201
90000
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更多MBR360T3供應(yīng)商 更新時(shí)間2024-12-24 10:30:00