首頁 >NRVBAF360T3G>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
NRVBAF360T3G | Surface Mount Schottky Power Rectifier | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
NRVBAF360T3G | 包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：DO-221AC，SMA 扁平引線 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 60V 4A SMA-FL | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
SurfaceMountSchottkyPowerRectifier SCHOTTKYBARRIERRECTIFIERS3.0AMPERES20,30,40VOLTS ThesedevicesemploytheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,hi | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
SurfaceMountSchottkyPowerRectifier | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SCHOTTKYBARRIERRECTIFIERS SCHOTTKYBARRIERRECTIFIERS3.0AMPERES20,30,40VOLTS ThesedevicesemploytheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,hi | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SCHOTTKYBARRIERRECTIFIERS3.0AMPERES,60VOLTS SCHOTTKYBARRIERRECTIFIERS3.0AMPERES,60VOLTS ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,hi | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SurfaceMountUltrafastPowerRectifiers | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
ULTRAFASTRECTIFIERS3.0AMPERES200-600VOLTS SurfaceMountUltrafastPowerRectifiers ...employingstate–of–the–artepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforhighvoltage,highfrequencyrectification,orasfreewheelingandprotectiondiodes,insurfacemountapplicationswherecompact | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
SurfaceMountUltrafastPowerRectifiers | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
PowerRectifiers,Ultra-fastRecovery Thisseriesemploysthestate?of?the?artepitaxialconstructionwith oxidepassivationandmetaloverlaycontact.Ideallysuitedforhigh voltage,highfrequencyrectification,orasfreewheelingand protectiondiodes,insurfacemountapplicationswherecompactsize andweightarecriticalt | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SurfaceMountUltrafastPowerRectifiers | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
Trench-basedSchottkyRectifier | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SCHOTTKYBARRIERRECTIFIERS3.0AMPERES,60VOLTS SCHOTTKYBARRIERRECTIFIERS3.0AMPERES,60VOLTS ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,hi | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
產(chǎn)品屬性
- 產(chǎn)品編號：
NRVBAF360T3G
- 制造商：
onsemi
- 類別：
分立半導(dǎo)體產(chǎn)品 > 二極管 - 整流器 - 單
- 系列：
Automotive, AEC-Q101
- 包裝：
卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶
- 二極管類型：
肖特基
- 電流 - 平均整流 (Io)：
4A
- 速度：
快速恢復(fù) =< 500ns，> 200mA（Io）
- 安裝類型：
表面貼裝型
- 封裝/外殼：
DO-221AC，SMA 扁平引線
- 供應(yīng)商器件封裝：
SMA-FL
- 工作溫度 - 結(jié)：
-65°C ~ 150°C
- 描述：
DIODE SCHOTTKY 60V 4A SMA-FL
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
23+ |
標(biāo)準(zhǔn)封裝 |
12048 |
全新原裝正品/價格優(yōu)惠/質(zhì)量保障 |
詢價 | ||
ONSEMI |
24+ |
N/A |
10000 |
只做原裝,實(shí)單最低價支持 |
詢價 | ||
ONSEMI/安森美 |
2410+ |
80000 |
原裝正品.假一賠百.正規(guī)渠道.原廠追溯. |
詢價 | |||
ON(安森美) |
23+ |
SMA-FL |
13451 |
公司只做原裝正品,假一賠十 |
詢價 | ||
ON |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
ON(安森美) |
23+ |
25900 |
新到現(xiàn)貨,只有原裝 |
詢價 | |||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 | ||||
ON/安森美 |
1922+ |
SMA |
6852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
ON |
20+ |
SMA-FL |
36800 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
ON |
2020+ |
SMA-FL |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 |
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