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MJ3055

BipolarNPNDeviceinaHermeticallysealedTO3MetalPackage

SEME-LAB

Seme LAB

MJ3055

iscSiliconNPNPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJB3055

iscSiliconNPNPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJD3055

ComplementaryPowerTransistors

MJD2955(PNP) MJD3055(NPN) SILICONPOWERTRANSISTORS10AMPERES60VOLTS,20WATTS DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) ?Strai

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD3055

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION TheMJD2955andMJD3055formcomplementaryPNP-NPNpairs.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERRED SALESTYPES ■SURFACE-MOUNTINGTO-252(DPAK) POWERPACKAGEINTAPE&REEL (SUFFIXT4)

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MJD3055

GeneralPurposeAmplifierLowSpeedSwitchingApplicationsD-PAKforSurfaceMountApplications

GeneralPurposeAmplifier LowSpeedSwitchingApplications D-PAKforSurfaceMountApplications ?LeadFormedforSurfaceMountApplications(NoSuffix) ?StraightLead(I-PAK,“-I“Suffix) ?ElectricallySimilartoPopularMJE3055T ?DCCurrentGainSpecifiedto10A ?HighCurrentGain-

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MJD3055

COMPLEMENTARYPOWERTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MJD3055

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD3055

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD3055

TRANSISTOR(NPN)

FS

First Silicon Co., Ltd

MJD3055

iscSiliconNPNPowerTransistor

DESCRIPTION ?ExcellentSafeOperatingArea ?Collector-EmitterSaturationVoltage-:VCE(sat)=1.1V(Max)@IC=4A ?ComplementtoTypeMJD2955 ?DPAKforSurfaceMountApplications ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ?Designed

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJD3055

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD3055

TO-251-3LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications ●ElectricallySimiartoMJE3055 ●DCCurrentGainSpecifiedto10A

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

MJD3055

TO-252-2LPlastic-EncapsulateTransistors

FEATURES DesignedforGeneralPurposeAmplifierdanLowSpeed SwitchingApplications ElectricallySimiartoMJE3055 DCCurrentGainSpecifiedto10Amperes

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

MJD3055

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=60V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=1.1V(Max)@IC=4A ·ComplementtoTypeMJD2955 APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJD3055

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=60V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=1.1V(Max)@IC=4A ·ComplementtoTypeMJD2955 APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJD3055G

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD3055G

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD3055G

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD3055G

ComplementaryPowerTransistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) ?StraightLeadVersioninPlasticSleeves(“?1”Suff

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

替換型號

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
進(jìn)口原裝
23+
SMD
44151
全新原裝現(xiàn)貨,專業(yè)代理熱賣
 詢價(jià)
EPSON/愛普生
24+
SMD
880000
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
24+
3000
公司現(xiàn)貨
 詢價(jià)
EPSON
24+
SMD
3500
原裝現(xiàn)貨,可開13%稅票
 詢價(jià)
EPSONTOYOCOM
23+
NA
39960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
EPSON
19+
SMD
82926
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
32.768K
新
500
全新原裝 貨期兩周
 詢價(jià)
EPSON
18+
SMD
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
 詢價(jià)
EPSON
12+
貼片
6000
絕對原裝自己現(xiàn)貨
 詢價(jià)
SeikoInst
2022+
969
全新原裝 貨期兩周
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更多MC3055L供應(yīng)商 更新時(shí)間2025-1-14 9:18:00

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