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MCP140N10Y

N-Channel Enhancement Mode Field Effect Transistor

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

CEB140N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,137A,RDS(ON)=7.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP140N10

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

CEP140N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,137A,RDS(ON)=7.5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Lead-freeplating;RoHScompliant.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP140N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,137A,RDS(ON)=7.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEWP140N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,150A,RDS(ON)=7.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-3Ppackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FIR140N10ANFG

N-ChannelEnhancementModePowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FIR140N10PG

N-ChannelEnhancementModePowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FIR140N10RG

N-ChannelEnhancementModePowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FQA140N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=140A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.01Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQA140N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQH140N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=140A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.01Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQH140N10

100VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IXFH140N10P

PolarHVHiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFT140N10P

PolarHVHiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXTQ140N10P

PolarHT??PowerMOSFET

IXYS

IXYS Corporation

IXTQ140N10P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXTT140N10P

PolarHT??PowerMOSFET

IXYS

IXYS Corporation

RU140N10R

N-ChannelAdvancedPowerMOSFET

RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd

銳駿半導(dǎo)體深圳銳駿半導(dǎo)體股份有限公司

RU140N10R

N-ChannelMOSFETusesadvancedSGTtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

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26749
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26749
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15000
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更多MCP140N10Y供應(yīng)商 更新時(shí)間2025-1-3 14:14:00