首頁 >MDF4N60DTH>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
N-ChannelMOSFET600V,3.5A,2.0? GeneralDescription TheseN-channelMOSFETareproducedusingadvanced MagnaChip’sMOSFETTechnology,whichprovideslowonstateresistance,highswitchingperformanceandexcellent quality. ThesedevicesaresuitabledeviceforSMPS,highSpeed switchingandgeneralpurposeapplications. | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-ChannelMOSFET600V,3.5A,2.0ohm | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications | Motorola Motorola, Inc | Motorola | ||
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
InsulatedGateBipolarTransistorwithAnti-ParallelDiode InsulatedGateBipolarTransistorwithAnti-ParallelDiode N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–block | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
N-CHANNELMOSFET APPLICATIONS ?Highefficiencyswitch modepowersupplies ?Electroniclampballasts basedonhalfbridge ?LEDpowersupplies FEATURES ?Lowgatecharge ?Fastswitching ?100%avalanchetested ?Improveddv/dtcapability ?RoHSproduct | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
N-CHANNELMOSFET APPLICATIONS ?Highefficiencyswitch modepowersupplies ?Electroniclampballasts basedonhalfbridge ?LEDpowersupplies FEATURES ?Lowgatecharge ?Fastswitching ?100%avalanchetested ?Improveddv/dtcapability ?RoHSproduct | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
N-ChannelEnhancementModePowerMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
600VN-ChannelMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
MSF4N60600VN-ChannelMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
600VN-ChannelMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
N-ChannelEnhancementModePowerMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
600VN-ChannelMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
600VN-ChannelMOSFET | BWTECH Bruckewell Technology LTD | BWTECH |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
NXP/恩智浦 |
23+ |
TO-126 |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 | ||
MAGNACHIP |
22+ |
TO-220F |
28600 |
只做原裝正品現(xiàn)貨假一賠十一級代理 |
詢價 | ||
M |
23+ |
TO-220F |
10000 |
公司只做原裝正品 |
詢價 | ||
美格納 |
2022+ |
TO-220F |
12888 |
原廠代理 終端免費提供樣品 |
詢價 | ||
M |
23+ |
TO-220F |
6000 |
原裝正品,支持實單 |
詢價 | ||
infineon |
2023+ |
TO-220F |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
MAGNACHIP |
TO-220F |
90000 |
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
MAGNACHIP/美格納 |
2022+ |
TO-220F |
30000 |
進口原裝現(xiàn)貨供應,原裝 假一罰十 |
詢價 | ||
MAGNACHIP/美格納 |
20+ |
TO-220F |
32500 |
現(xiàn)貨很近!原廠很遠!只做原裝 |
詢價 | ||
MAGNACHIP/美格納 |
2022 |
TO-220F |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 |
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