首頁 >MDP15N60GTH>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
MDP15N60GTH | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
MDP15N60GTH | N-Channel MOSFET 600V, 15A, 0.40(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | |
MDP15N60GTH | N-Channel MOSFET 600V, 15A, 0.40(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | |
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistorN–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Italsoprovideslowon–voltagewhichresultsinefficientoperationat | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistorN–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Italsoprovidesfastswitchingcharacteristicsandresultsinefficien | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
N-ChannelEnhancementModePowerMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
N-ChannelEnhancementModePowerMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
N-ChannelEnhancementModePowerMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
IGBT-Short-CircuitRated | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IGBT-Short-CircuitRated | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
15A600VSingleN??hannelPowerMOSFET | PFC PFC Device Inc. | PFC | ||
IGBT Features 600V,15A VCE(sat)(typ.)=1.75V@VGE=15V,IC=15A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UPS, general | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
IGBT Features ?600V,15A ?VCE(sat)(typ.)=1.75V@VGE=15V,IC=15A ?Highspeedswitching ?Highersystemefficiency ?Softcurrentturn-offwaveforms ?SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UPS, | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
IGBT Features 600V,15A VCE(sat)(typ.)=1.75V@VGE=15V,IC=15A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UPS, general | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
FastIGBTinNPT-technology FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HighSpeedIGBTinNPT-technology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HighSpeedIGBTinNPT-technology HighSpeedIGBTinNPT-technology ?30lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedforoperationabove30kHz ?NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature - | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
ShortCircuitRatedIGBT | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
ShortCircuitRatedIGBT GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswh | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild |
詳細參數(shù)
- 型號:
MDP15N60GTH
- 制造商:
MagnaChip
- 功能描述:
N-Channel MOSFET 600V, 15A, 0.40?
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
MagnaChip |
18+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應(yīng)QQ3171516190 |
詢價 | ||
MAGNACH |
23+ |
TO-220 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
美格納 |
2018+ |
TO-220 |
26976 |
代理原裝現(xiàn)貨/特價熱賣! |
詢價 | ||
MAGNACHIP |
20+ |
TO-220 |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
MAGNACHIP/美格納 |
23+ |
TO-220 |
10000 |
公司只做原裝正品 |
詢價 | ||
MAGNACHIP/美格納 |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
MAGNACHIP/美格納 |
2022 |
TO-220 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
MAGNACHIP/美格納 |
2022+ |
TO-220 |
50000 |
原廠代理 終端免費提供樣品 |
詢價 | ||
MAGNACHIP |
TO-220 |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
MAGNACHIP/美格納 |
22+ |
TO-220 |
3550 |
只有原裝 低價 實單必成 |
詢價 |
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