首頁 >NGTB15N60EG>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

NGTB15N60EG

IGBT - Short-Circuit Rated

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NGTB15N60EG

IGBT - Short-Circuit Rated

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NGTB15N60EG

包裝：管件 封裝/外殼：TO-220-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 30A 117W TO220-3

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NGTB15N60EG_15

IGBT - Short-Circuit Rated

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

PSM15N60CT

15A600VSingleN??hannelPowerMOSFET

PFC

PFC Device Inc.

RLBGB15N60

IGBT

Features 600V,15A VCE(sat)(typ.)=1.75V@VGE=15V,IC=15A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UPS, general

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

RLGB15N60CT

IGBT

Features ?600V,15A ?VCE(sat)(typ.)=1.75V@VGE=15V,IC=15A ?Highspeedswitching ?Highersystemefficiency ?Softcurrentturn-offwaveforms ?SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UPS,

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

RLPGB15N60CT

IGBT

Features 600V,15A VCE(sat)(typ.)=1.75V@VGE=15V,IC=15A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UPS, general

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

SGB15N60

FastIGBTinNPT-technology

FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGB15N60

FastIGBTinNPT-technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGB15N60HS

HighSpeedIGBTinNPT-technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGB15N60HS

HighSpeedIGBTinNPT-technology

HighSpeedIGBTinNPT-technology ?30lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedforoperationabove30kHz ?NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGF15N60RUFD

ShortCircuitRatedIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGH15N60

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGH15N60RUF

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGH15N60RUFD

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverters

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGH15N60RUFDTU

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverters

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGP15N60

FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration

FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highrugg

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGP15N60

FastIGBTinNPT-technology

FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGP15N60

ShortCircuitRatedIGBT

GeneralDescription FairchildsInsulatedGateBipolarTransistor(IGBT)RUFseriesprovideslowconductionandswitchinglossesaswellasshortcircuitruggedness.RUFseriesisdesignedfortheapplicationssuchasmotorcontrol,UPSandgeneralinverterswhereshort-circuitruggednessisrequir

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    NGTB15N60EG

  • 制造商：

    onsemi

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝：

    管件

  • IGBT 類型：

    NPT

  • 不同?Vge、Ic 時?Vce(on)（最大值）：

    1.95V @ 15V，15A

  • 開關(guān)能量：

    900μJ（開），300μJ（關(guān)）

  • 輸入類型：

    標(biāo)準(zhǔn)

  • 25°C 時 Td（開/關(guān)）值：

    78ns/130ns

  • 測試條件：

    400V，15A，22 歐姆，15V

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3

  • 供應(yīng)商器件封裝：

    TO-220AB

  • 描述：

    IGBT 600V 30A 117W TO220-3

供應(yīng)商型號品牌批號封裝庫存備注價格
ONSemiconductor
18+
NA
3196
進口原裝正品優(yōu)勢供應(yīng)QQ3171516190
 詢價
ON
23+
TO-220
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
三年內(nèi)
1983
只做原裝正品
 詢價
ON Semiconductor
2010+
N/A
950
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
ON
1809+
TO-220
3675
就找我吧!--邀您體驗愉快問購元件!
 詢價
ON/安森美
23+
TO-220-3
10000
公司只做原裝正品
 詢價
ON/安森美
24+
NA
57188
詢價
ON Semiconductor
22+
TO220
9000
原廠渠道,現(xiàn)貨配單
 詢價
ON/安森美
23+
TO-220-3
6000
原裝正品，支持實單
 詢價
ON/安森美
22+
TO-220
100000
代理渠道/只做原裝/可含稅
 詢價
更多NGTB15N60EG供應(yīng)商 更新時間2024-12-31 14:16:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多