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PSM15N60CT

15A 600V Single N??hannel Power MOSFET

PFC

PFC Device Inc.

RLBGB15N60

IGBT

Features 600V,15A VCE(sat)(typ.)=1.75V@VGE=15V,IC=15A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UPS, general

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

RLGB15N60CT

IGBT

Features ?600V,15A ?VCE(sat)(typ.)=1.75V@VGE=15V,IC=15A ?Highspeedswitching ?Highersystemefficiency ?Softcurrentturn-offwaveforms ?SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UPS,

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

RLPGB15N60CT

IGBT

Features 600V,15A VCE(sat)(typ.)=1.75V@VGE=15V,IC=15A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UPS, general

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

SGB15N60

FastIGBTinNPT-technology

FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGB15N60

FastIGBTinNPT-technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGB15N60HS

HighSpeedIGBTinNPT-technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGB15N60HS

HighSpeedIGBTinNPT-technology

HighSpeedIGBTinNPT-technology ?30lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedforoperationabove30kHz ?NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGF15N60RUFD

ShortCircuitRatedIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGH15N60

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGH15N60RUF

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGH15N60RUFD

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverters

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGH15N60RUFDTU

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverters

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGP15N60

FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration

FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highrugg

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGP15N60

FastIGBTinNPT-technology

FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGP15N60

ShortCircuitRatedIGBT

GeneralDescription FairchildsInsulatedGateBipolarTransistor(IGBT)RUFseriesprovideslowconductionandswitchinglossesaswellasshortcircuitruggedness.RUFseriesisdesignedfortheapplicationssuchasmotorcontrol,UPSandgeneralinverterswhereshort-circuitruggednessisrequir

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGP15N60RUF

ShortCircuitRatedIGBT

GeneralDescription FairchildsInsulatedGateBipolarTransistor(IGBT)RUFseriesprovideslowconductionandswitchinglossesaswellasshortcircuitruggedness.RUFseriesisdesignedfortheapplicationssuchasmotorcontrol,UPSandgeneralinverterswhereshort-circuitruggednessisrequir

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGW15N60

FastIGBTinNPT-technology

FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGW15N60

FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration

FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highrugg

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGW15N60

ShortCircuitRatedIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

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Mitsubish
20+
IPMDIP
15800
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MITSUBSHI
2016+
DIP24
6523
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MITSUBISHI
23+
ZIP
50000
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MITSUBISHI/三菱
23+
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8999999
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三菱/Mitsubishi
23+
20000
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MITSUBISHI
ZIP
699839
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MITSUBISHI
589220
16余年資質(zhì) 絕對(duì)原盒原盤 更多數(shù)量
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MITSUBISHI
23+
原裝正品現(xiàn)貨
10000
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詢價(jià)
24+
N/A
62000
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AUGAT
2016
全新原裝 貨期兩周
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更多PSM15N60CT供應(yīng)商 更新時(shí)間2024-12-29 10:12:00