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ME2N60

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

MSD2N60

600VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

MSF2N60

600VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

MSQ2N60

N-ChannelEnhancementModePowerMOSFET

BWTECH

Bruckewell Technology LTD

MSU2N60

600VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

MSU2N60S

600VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

MTB2N60E

TMOSPOWERFET2.0AMPERES600VOLTS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB2N60E

HighEnergyPowerFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTN2N60CFP

N-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTN2N60DFP

N-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTN2N60FP

N-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTP2N60

TMOSPOWERFET2.0AMPERES600VOLTSRDS(on)=3.8OHMS

TMOSE-FET?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandh

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP2N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTP2N60E

TMOSPOWERFET2.0AMPERES600VOLTSRDS(on)=3.8OHMS

TMOSE-FET?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandh

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP2N60E

N-ChannelEnhancement-ModeSiliconGate

TMOSE?FETPowerFieldEffectTransistor N?ChannelEnhancement?ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage?blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE?FETisdesignedtowithstandhi

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTP2N60E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP2N60E

N-Channel650V(D-S)MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

NDT2N60

N-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

NDT2N60P

N-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

NJ2N60

2.0A600VN-CHANNELPOWERMOSFET

FEATURES RDS(ON)@VGS=10V UltraLowgatecharge(typical9.0nC) Lowreversetransfercapacitance(CRSS=typical5.0pF) Fastswitchingcapability Avalancheenergyspecified Improveddv/dtcapability,highruggedness

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
MAGNACHIP/美格納
2021+
TO-220AB
12000
勤思達(dá) 只做原裝 現(xiàn)貨庫(kù)存
詢價(jià)
MAGNACHIP/美格納
2021+
TO-220AB
9000
原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià)
詢價(jià)
MAGNACHIP
2010
TO-220AB
4010
原廠直銷
詢價(jià)
MAGNACHIP
17+
TO-220AB
6200
100%原裝正品現(xiàn)貨
詢價(jià)
MAGNACHIP
1645+
TO-220AB
8500
只做原裝進(jìn)口,假一罰十
詢價(jià)
NA
19+
83743
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價(jià)
MAGNACHIP
22+23+
TO-220AB
34643
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價(jià)
MAGNACHIP
20+
TO-220AB
32500
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
詢價(jià)
MAGNACHIP/美格納
24+
TO220
47900
絕對(duì)原廠原裝,長(zhǎng)期優(yōu)勢(shì)可定貨
詢價(jià)
MAGNACHIP
24+
TO-220AB
35200
一級(jí)代理/放心采購(gòu)
詢價(jià)
更多MDP2N60TH供應(yīng)商 更新時(shí)間2025-1-14 11:04:00