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MSD2N60

600V N-Channel MOSFET

BWTECH

Bruckewell Technology LTD

MSF2N60

600VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

MSQ2N60

N-ChannelEnhancementModePowerMOSFET

BWTECH

Bruckewell Technology LTD

MSU2N60

600VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

MSU2N60S

600VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

MTB2N60E

TMOSPOWERFET2.0AMPERES600VOLTS

Motorola

Motorola, Inc

MTB2N60E

HighEnergyPowerFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTN2N60CFP

N-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTN2N60DFP

N-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTN2N60FP

N-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTP2N60

TMOSPOWERFET2.0AMPERES600VOLTSRDS(on)=3.8OHMS

TMOSE-FET?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandh

Motorola

Motorola, Inc

MTP2N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP2N60E

TMOSPOWERFET2.0AMPERES600VOLTSRDS(on)=3.8OHMS

TMOSE-FET?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandh

Motorola

Motorola, Inc

MTP2N60E

N-ChannelEnhancement-ModeSiliconGate

TMOSE?FETPowerFieldEffectTransistor N?ChannelEnhancement?ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage?blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE?FETisdesignedtowithstandhi

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTP2N60E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP2N60E

N-Channel650V(D-S)MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

NDT2N60

N-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

NDT2N60P

N-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

NJ2N60

2.0A600VN-CHANNELPOWERMOSFET

FEATURES RDS(ON)@VGS=10V UltraLowgatecharge(typical9.0nC) Lowreversetransfercapacitance(CRSS=typical5.0pF) Fastswitchingcapability Avalancheenergyspecified Improveddv/dtcapability,highruggedness

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

NJ2N60

2.0A600VN-CHANNELPOWERMOSFET

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
MSTAR
2016+
LQFP256
6000
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詢價
MSTAR
23+
LQFP256
8650
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MSTAR
2008
LQFP256
2592
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MSTAR
23+
LQFP256
4500
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MSTAR
QFP
699839
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MSTAR
23+
QFP
432
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18+
MODULE
2180
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MICROSEMI/美高森美
23+
MODULE
10000
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MSTAR
17+
BGA
6200
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MSTAR
2018+
BGA
11256
只做進(jìn)口原裝正品!假一賠十!
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更多MSD2N60供應(yīng)商 更新時間2024-11-6 8:30:00