零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
MSD50N03 | N-Channel Logic Level Enhancement Mode Power MOSFET | BWTECH Bruckewell Technology LTD | BWTECH | |
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-ChannelMOSFET | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=45A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=14mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-Channel30V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor [Niko-Sem] | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
N-Channel30V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Verylowon-stateresistance ?Fastswitching ?Highthermalcyclingperformance ?Lowthermalresistance ?Logiclevel | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Verylowon-stateresistance ?Fastswitching ?Highthermalcyclingperformance ?Lowthermalresistance ?Logiclevel | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=16mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=21mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Verylowon-stateresistance ?Fastswitching ?Highthermalcyclingperformance ?Lowthermalresistance ?Logiclevel | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-Channel30-V(D-S)MOSFET FEATURES ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2011/65/EU APPLICATIONS ?OR-ing ?Server ?DC/DC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
BURNDY |
新 |
1 |
全新原裝 貨期兩周 |
詢價 | |||
Misan |
1.5KReel |
8560 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
MISAN |
23+ |
NA |
880000 |
明嘉萊只做原裝正品現貨 |
詢價 | ||
Microsemi Corporation |
22+ |
SM2 |
9000 |
原廠渠道,現貨配單 |
詢價 | ||
Microsemi Corporation |
23+ |
SM2 |
9000 |
原裝正品,支持實單 |
詢價 | ||
MicrosemiPowerProductsGr |
23+ |
DIODEBRIDGE3PH800V50ASM2 |
1726 |
專業(yè)代理銷售半導體模塊,能提供更多數量 |
詢價 | ||
MICROSEMI |
23+ |
NA |
13650 |
原裝正品,假一罰百! |
詢價 | ||
MICROSEMI |
16+ |
MODULE |
2100 |
一級代理/全新原裝現貨 供應!!! |
詢價 | ||
Microsemi |
1942+ |
N/A |
908 |
加我qq或微信,了解更多詳細信息,體驗一站式購物 |
詢價 | ||
Microsemi/美高森美 |
23+ |
標準封裝 |
5000 |
原廠授權一級代理 IGBT模塊 可控硅 晶閘管 熔斷器質保 |
詢價 |
相關規(guī)格書
更多- MSD50N10
- MSD511
- MSD51A1
- MSD51A1G-125M
- MSD52
- MSD52-12
- MSD52-18
- MSD52A1G
- MSD52A4
- MSD534
- MSD53A1
- MSD53A1G-125M
- MSD53A4-77.76M
- MSD53A4G5-77.76M
- MSD54A1G
- MSD-5-A
- MSD601
- MSD-601RT1
- MSD601-RT1
- MSD601-RT1
- MSD601-RT1_12
- MSD-601ST1
- MSD601-ST1
- MSD601-ST1
- MSD602
- MSD602-RT1
- MSD-602RT1G
- MSD602-RT1G
- MSD6100
- MSD611
- MSD614
- MSD6150
- MSD61A1
- MSD61A4
- MSD621
- MSD624
- MSD62A1
- MSD62A4
- MSD631
- MSD634
- MSD63A1
- MSD641
- MSD644
- MSD64A1
- MSD64A4
相關庫存
更多- MSD50NBT
- MSD511-47.76M
- MSD51A1G
- MSD51TA-X
- MSD52-08
- MSD52-16
- MSD52A1
- MSD52A1G-125M
- MSD52A4-125.00M
- MSD534-125.00M
- MSD53A1G
- MSD53A4
- MSD53A4G5
- MSD54A1
- MSD54A1G-125M
- MSD601
- MSD601RT1
- MSD601-RT1
- MSD601-RT1
- MSD601-RT1
- MSD-601RT1G
- MSD601-ST1
- MSD601-ST1
- MSD-601ST1G
- MSD602-RT1
- MSD602-RT1
- MSD602-RT1G
- MSD602-RT1G_14
- MSD6100
- MSD611-77.76M
- MSD614-44.736M
- MSD6150
- MSD61A1-44.736M
- MSD61A4-51.84M
- MSD621-100.00M
- MSD624-100.00M
- MSD62A1-44.736M
- MSD62A4-100.00M
- MSD631-106.25M
- MSD634-125.00M
- MSD63A1-44.736M
- MSD641-44.736M
- MSD644-51.84M
- MSD64A1-44.736M
- MSD64A4-125.00M